5962-8854402LA datasheet, PDF - EEWORLD Datasheet

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5962-8854402LA: DescriptionStandard SRAM, 256KX1, 45ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24; Categorystorage storage; File Size58KB，2 Pages; ManufacturerEDI [Electronic devices inc.]

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5962-8854402LA Overview

Standard SRAM, 256KX1, 45ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24

5962-8854402LA Parametric

Parameter Name	Attribute value
Maker	EDI [Electronic devices inc.]
package instruction	0.300 INCH, CERAMIC, DIP-24
Reach Compliance Code	unknown
Maximum access time	45 ns
JESD-30 code	R-CDIP-T24
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	24
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256KX1
Output characteristics	3-STATE
Exportable	NO
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	5.08 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	7.62 mm
Base Number Matches	1

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Description	Standard SRAM, 256KX1, 45ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24	Standard SRAM, 256KX1, 45ns, CMOS, CDFP28, CERAMIC, DFP-28	Standard SRAM, 256KX1, 45ns, CMOS, CQCC28, CERAMIC, LCC-28	Standard SRAM, 256KX1, 45ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24	Standard SRAM, 256KX1, 55ns, CMOS, CQCC28, CERAMIC, LCC-28	Standard SRAM, 256KX1, 55ns, CMOS, CDFP28, CERAMIC, DFP-28	Standard SRAM, 256KX1, 55ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24	Standard SRAM, 256KX1, 45ns, CMOS, CQCC28, CERAMIC, LCC-28	Standard SRAM, 256KX1, 55ns, CMOS, CQCC28, CERAMIC, LCC-28	Standard SRAM, 256KX1, 55ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
package instruction	0.300 INCH, CERAMIC, DIP-24	CERAMIC, DFP-28	CERAMIC, LCC-28	0.300 INCH, CERAMIC, DIP-24	CERAMIC, LCC-28	CERAMIC, DFP-28	0.300 INCH, CERAMIC, DIP-24	CERAMIC, LCC-28	CERAMIC, LCC-28	0.300 INCH, CERAMIC, DIP-24
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
Maximum access time	45 ns	45 ns	45 ns	45 ns	55 ns	55 ns	55 ns	45 ns	55 ns	55 ns
JESD-30 code	R-CDIP-T24	R-CDFP-F28	R-CQCC-N28	R-CDIP-T24	R-CQCC-N28	R-CDFP-F28	R-CDIP-T24	R-CQCC-N28	R-CQCC-N28	R-CDIP-T24
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	1	1	1	1	1	1	1	1	1	1
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	24	28	28	24	28	28	24	28	28	24
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	256KX1	256KX1	256KX1	256KX1	256KX1	256KX1	256KX1	256KX1	256KX1	256KX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP	DFP	QCCN	DIP	QCCN	DFP	DIP	QCCN	QCCN	DIP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	FLATPACK	CHIP CARRIER	IN-LINE	CHIP CARRIER	FLATPACK	IN-LINE	CHIP CARRIER	CHIP CARRIER	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	5.08 mm	3.302 mm	3.048 mm	5.08 mm	3.048 mm	3.302 mm	5.08 mm	3.048 mm	3.048 mm	5.08 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	YES	YES	NO	YES	YES	NO	YES	YES	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	FLAT	NO LEAD	THROUGH-HOLE	NO LEAD	FLAT	THROUGH-HOLE	NO LEAD	NO LEAD	THROUGH-HOLE
Terminal pitch	2.54 mm	1.27 mm	1.27 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm
Terminal location	DUAL	DUAL	QUAD	DUAL	QUAD	DUAL	DUAL	QUAD	QUAD	DUAL
width	7.62 mm	10.16 mm	8.89 mm	7.62 mm	8.89 mm	10.16 mm	7.62 mm	8.89 mm	8.89 mm	7.62 mm
Maker	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	-	-	-	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]
Base Number Matches	1	1	1	1	1	1	1	1	1	-

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