SFS884 thru SFS889
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
•
•
•
•
•
•
•
High Surge Current
High On State Current
High Frequency up to 400 Hz operation
Anode Common to Case
Hermetically Sealed
Replacement for part number 2N884 thru 2N889
and 2N876 thru 2N881 devices.
TX, TXV, S-Level Screening Available. Consult
Factory
20 AMPS
15
─
200 VOLTS
SILICON CONTROLLED
RECTIFIER
TO-18
MAXIMUM RATINGS
(T
J
= 25 C UNLESS OTHERWISE NOTED, R
GK
= 1K
Ω)
o
Symbol
V
DRM
V
RRM
Value
15
30
60
100
150
200
0.5
0.35
20
250
5
-65 to +150
-65 to +150
3x Ø.021
.016
Units
Peak Repetitive Reverse Voltage
and DC Blocking Voltage
SFS884
SFS885
SFS886
SFS887
SFS888
SFS889
T
a
= 30
o
C
T
a
= 100ºC
Volts
Average On-State Current
Peak Recurrent Surge Current
(T
a
≤
100
o
C, tp = 0.2 ms, duty cycle = 0.1 % )
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
PACKAGE OUTLINE:
TO-18
.210
.170
I
F (AV)
I
FSR
I
GM
V
GM
T
J
T
stg
Amps
Amps
mA
Volts
o
o
C
C
.500 MIN
Ø.105
.095
3
2
Ø.230
.209
Ø.195
.178
45°
1
.046
.036
.030 MAX
.048
.028
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com *
www.ssdi-power.com
SFS884 thru SFS889
ELECTRICAL CHARACTERISTICS
( T
a
= 25ºC unless otherwise indicated)
Symbol
T
j
= 25ºC
T
j
= 125ºC
T
j
= 25ºC
T
j
= 125ºC
I
RRM
I
DRM
V
TM
I
GR
I
GT
V
GT
I
H
dV/dt
tqt
Min
––
––
––
––
––
0.4
––
––
––
Typical
––
––
1.0
––
50
0.65
1.0
750
2
Max
10
100
10
100
1.50
10
80
0.72
2.2
––
––
Unit
µA
µA
Volts
µA
µA
Volts
mA
V/µs
µs
Peak Reverse Blocking Current
(Rated V
RRM
)
Peak Forward Blocking Current
(Rated V
DRM
)
Peak On-State Voltage
(I
F
= 0.2 A Peak )
Reverse Gate Current
(V
G
= -2 V
DC
, Anode = open)
Gate Trigger Current
(V
D
= 12 V
DC
, R
L
= 33
Ω)
Gate Trigger Voltage
(V
D
= 12 V
DC
, R
L
= 33
Ω)
Holding Current
(I
T
= 500 mA, Gate Open)
Critical Rate of Voltage Rise
(Linear slope up to VD= 67% of VDRM, Rgk= 1KΩ)
Commutated Turn-off Time
(If = 2A, Ig = 200 mA, dIg/dt = 0.1A/us)
NOTES:
1/ Unless Otherwise Specified, All Electrical Characteristics @ T
C
= 25
o
C, R
GK
= 1K
Ω.
Available Part Numbers:
SFS884, SFS885, SFS886, SFS887, SFS888, SFS889
PIN ASSIGNMENT (Standard)
Package
Cathode
Gate
Anode
Pin 1
Pin 2
Pin 3 (case)
TO-18
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SCR008A
DOC
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
