NLB-300Cas-
cadable
Broadband
GaAs MMIC
Amplifier DC to
10GHz
NLB-300
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 10GHz
RoHS Compliant & Pb-Free Product
Package Style: Micro-X, 4-Pin, Plastic
3
Features
Reliable, Low-Cost HBT
Design
13.0dB Gain, +11.1dBm
P1dB@2GHz
High P1dB of
+14.1dBm@6.0GHz and
+12.7dBm@10.0GHz
Single Power Supply Opera-
tion
50Ω I/O Matched for High
Freq. Use
GENERAL PURPOSE
AMPLIFIERS (LNAs,
GND
4
MARKING - N3
RF IN 1
3 RF OUT
2
GND
Applications
Narrow and Broadband Com-
mercial and Military Radio
Designs
Linear and Saturated Amplifi-
ers
Gain Stage or Driver Amplifi-
ers for MWRadio/Optical
Designs (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cel-
lular/DWDM)
Functional Block Diagram
Product Description
The NLB-300 cascadable broadband InGaP/GaAs MMIC amplifier is a low-
cost, high-performance solution for general purpose RF and microwave
amplification needs. This 50Ω gain block is based on a reliable HBT pro-
prietary MMIC design, providing unsurpassed performance for small-sig-
nal applications. Designed with an external bias resistor, the NLB-300
provides flexibility and stability. The NLB-300 is packaged in a low-cost,
surface-mount plastic package, providing ease of assembly for high-vol-
ume tape-and-reel requirements.
Ordering Information
NLB-300Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz
NLB-300
NLB-300-T1
NLB-300-E
NBB-X-K1
Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz
Tape & Reel, 1000 Pieces
Fully Assembled Evaluation Board
Extended Frequency InGaP Amp Designer’s Tool Kit
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A10 DS070123
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3-19
NLB-300
Absolute Maximum Ratings
Parameter
Rating
+20
300
70
200
-45 to +85
-65 to +150
Unit
dBm
mW
mA
°C
°C
°C
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
3
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Exceeding any one or a combination of these limits may cause permanent
damage.
Parameter
Overall
Small Signal Power Gain, S21
Min.
12.0
Specification
Typ.
13.0
10.7
8.9
Max.
Unit
dB
dB
dB
dB
dB
dB
Condition
V
D
=+3.8V, I
CC
=50mA, Z
0
=50Ω, T
A
=+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
f=10.0GHz to 12.0GHz
f=5.0GHz to 10.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 7.0GHz
f=7.0GHz to 12.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 7.0GHz
f=7.0GHz to 12.0GHz
8.5
Gain Flatness, GF
Input VSWR
8.9
8.5
±0.1
2.2:1
2.8:1
2.0:1
Output VSWR
2.2:1
2.9:1
2.4:1
Output Power @
-1dB Compression, P1dB
11.1
14.1
12.7
dBm
dBm
dBm
dB
dBm
dB
4.2
V
dB/°C
f=2.0GHz
f=6.0GHz
f=10.0GHz
f=3.0GHz
f=2.0GHz
f=6.0GHz
f=0.1GHz to 20.0GHz
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V
D
Gain Temperature Coefficient,
δG
T
/δT
3.6
4.9
+28.6
+27.0
-16
3.8
-0.0015
MTTF versus Temperature
@ I
CC
=50mA
Case Temperature
Junction Temperature
MTTF
85
113
>1,000,000
147
°C
°C
hours
°C/W
Thermal Resistance
θ
JC
J
T
–
T
CASE
-------------------------- =
θ
JC
( °C ⁄
Watt
)
-
V
D
⋅
I
CC
3-20
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A10 DS070123
NLB-300
Pin
1
Function
RF IN
Description
RF input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor,
suitable for the frequency of operation, should be used in most applica-
tions. DC coupling of the input is not allowed, because this will override the
internal feedback loop and cause temperature instability.
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V
CC
. The resistor is selected to set the DC
current into this pin to a desired level. The resistor value is determined by
the following equation:
Interface Schematic
2
3
GND
RF OUT
3
RF OUT
(
V
CC
–
V
DEVICE
)
-
R
= ------------------------------------------
I
CC
Care should also be taken in the resistor selection to ensure that the cur-
rent into the part never exceeds maximum datasheet operating current
over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply near
5.0V is available, to provide DC feedback to prevent thermal runaway.
Because DC is present on this pin, a DC-blocking capacitor, suitable for the
frequency of operation, should be used in most applications. The supply
side of the bias network should also be well bypassed.
RF IN
4
GND
Same as pin 2.
Package Drawing
Symbol
B
MILLIMETERS
Min.
Nom. Max.
Min.
0.535 REF.
2.39 2.54 2.69
0.436 0.510 0.586
2.19 2.34 2.49
1.91 2.16 2.41
1.32 1.52 1.72
0.10 0.15 0.20
0.535 0.660 0.785
0.05 0.10 0.15
0.65 0.75 0.85
0.85 0.95 1.05
4.53 4.68 4.83
4.73 4.88 5.03
INCHES
Nom. Max.
0.021 REF.
0.094 0.100 0.106
0.017 0.020 0.023
0.086 0.092 0.098
0.075 0.085 0.095
0.052 0.060 0.068
0.004 0.006 0.008
0.021 0.026 0.031
0.002 0.004 0.006
0.025 0.029 0.033
0.033 0.037 0.041
0.178 0.184 0.190
0.186 0.192 0.198
D
4M
A
C
N5
1
2
3
4
5
A
B
C
D
E
F
G
H
J
K
L
M
N
E
6
0.08 S
Seating Plane
NOTE: All dimensions are in millimeters, and
the dimensions in inches are for reference only.
F
1J
G
2
H
Gauge Plane
S
0.1
L3
Kx3
Rev A10 DS070123
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3-21
GENERAL PURPOSE
AMPLIFIERS (LNAs,
NLB-300
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
3
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
V
CC
R
CC
4
In
1
C block
2
3
L choke
(optional)
Out
C block
V
DEVICE
Recommended Bias Resistor Values
Supply Voltage, V
CC
(V)
Bias Resistor, R
CC
(Ω)
5
22
8
82
10
122
12
162
15
222
20
322
3-22
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A10 DS070123
NLB-300
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool
kit contains the following.
•
•
•
•
5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers
5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
2 Broadband Evaluation Boards and High Frequency SMA Connectors
Broadband Bias Instructions and Specification Summary Index for ease of operation
3
GENERAL PURPOSE
AMPLIFIERS (LNAs,
Rev A10 DS070123
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3-23
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