RF2377
0
Typical Applications
• CDMA PCS/Cellular Handsets
• TDMA PCS/Cellular Handsets
• W-CDMA Handsets
PCS/CELLULAR TDMA/CDMA/W-CDMA
LINEAR VARIABLE GAIN AMPLIFIER
Product Description
The RF2377 is a linear variable gain amplifier suitable for
use in TDMA and CDMA systems in the cellular or PCS
band and for W-CDMA systems. The features of this
device include linear gain control, high gain, and high lin-
earity. The IC is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (GaAs HBT)
process and is featured in an industry-standard miniature
6-lead plastic SOT package.
1.80
1.40
0.50
0.35
0.10
MAX.
TEXT*
1.90
3.10
2.70
3.00
2.60
Shaded lead is pin 1.
Dimensions in mm.
0.90
0.70
1.30
1.00
9°
1°
0.25
0.10
0.37 MIN.
*When Pin 1 is in upper left,
text reads downward
(as shown).
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: SOT23-6
Features
• 50dB Linear Gain Control Range
• 24dB Maximum Gain
• Single 2.7V to 3.3V Supply
• 45mA Supply Current
• High Linearity
RF OUT 1
GND 2
GC 3
ATT
ATT
6 VCC
5 GND
4 RF IN
Ordering Information
PCS/Cellular TDMA/CDMA/W-CDMA Linear Vari-
able Gain Amplifier
RF2377-410 PCBAFully Assembled Evaluation Board, PCS
RF2377-411 PCBAFully Assembled Evaluation Board, W-CDMA
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
RF2377
Functional Block Diagram
Rev A11 020607
4-431
RF2377
Absolute Maximum Ratings
Parameter
Supply Voltage
DC Current
Operating Ambient Temperature
Storage Temperature
Rating
0 to +5.0
100
-20 to +85
-40 to +150
Unit
V
DC
mA
°C
°C
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
Usable Frequency Range
Linear Gain Control Range
Gain Control Slope
Specification
Min.
Typ.
Max.
800 to 2200
50
70
1880
24
1.5:1
+26
7
+8
-33
-61
Unit
MHz
dB
dB/V
Condition
V
CC
=2.8V, V
GC
=2.0V, T=25°C
TDMA
Operating Frequency
Maximum Small Signal Gain
Input VSWR
Output IP3
Noise Figure
Maximum Average Output Power
Adjacent Channel Power
Rejection
Alternate Channel Power
Rejection
22
+23
27
2.5:1
MHz
dB
V
CC
=2.8V, V
GC
=2.0V, T=25°C
Over entire gain control range
dBm
dB
dBm
dBc
dBc
Maximum gain
TDMA modulation
TDMA modulation; P
OUT
=+8dBm
TDMA modulation; P
OUT
=+8dBm
V
CC
=2.8V, V
GC
=2.0V, T=25°C
-32
-57
CDMA
Operating Frequency
Maximum Small Signal Gain
Input VSWR
Output IP3
Noise Figure
Maximum Average Output Power
Adjacent Channel Power
Rejection
22
+23
1880
24
1.5:1
+26
7
+11
-53
27
2.5:1
MHz
dB
Over entire gain control range
dBm
dB
dBm
dBc
Maximum gain
CDMA modulation; V
CC
=3.0V, maximum
gain setting, ACPR<-52dBc.
CDMA modulation; V
CC
=3.0V. For
P
IN
>-16dBm, adjustment of P
IN
is required
to maintain ACPR performance over gain
control range. For P
IN
< -16dBm, ACPR per-
formance is maintained over entire gain con-
trol range.
V
CC
=2.8V, T=25°C
V
GC
=2.0V
V
GC
=0.3V
Over entire gain control range
Maximum gain
Minimum gain
W-CDMA ACPR<-46dBc, V
GC
=2.0V
W-CDMA modulation; V
GC
=2.0V,
P
IN
<-12dBm
W-CDMA modulation; Over entire gain con-
trol range, P
IN
<-17dBm
W-CDMA modulation; V
GC
=1.0V,
P
IN
<-14dBm
W-CDMA
Operating Frequency
Small Signal Gain
Input VSWR
Output IP3
Noise Figure
Maximum Linear Output Power
Adjacent Channel Power
Rejection
20
-33
+22
4
32
+8
1920 to 1980
22
-32
1.5:1
+24
5
32.5
+9
-48
24
-31
2.5:1
6
34
-46
-43
-43
MHz
dB
dB
dBm
dB
dB
dBm
dBc
dBc
dBc
4-432
Rev A11 020607
RF2377
Parameter
Power Supply
Supply Voltage
Gain Control Voltage
Supply Current
2.8
2.7 to 3.3
0 to 2.0
45
56
V
V
V
mA
mA
mA
mA
Specification
Min.
Typ.
Max.
Unit
Condition
T = 25°C
Specifications
Operating range
V
CC
=2.8V, V
GC
=2.0V
V
CC
=3.0V, V
GC
=2.0V
V
CC
=2.8V, V
GC
=0.4V
32
65
20
1.5
V
GC
Current
Rev A11 020607
4-433
RF2377
Pin
1
2
3
Function
RF OUT
GND
GC
Description
RF output pin. This pin is DC coupled and requires V
CC
through a bias
inductor sized accordingly to provide a high pass transformation with a
series capacitor.
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
Analog gain control pin. This pin controls the gain of the IC. Minimum
gain occurs at V
GC
<0.4V and maximum gain is achieved with
V
GC
=2.0V. 50dB of linear gain control with little variation of input P
1dB
is available.
RF input pin. This pin is DC coupled.
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
Power supply. This pin should be connected to a regulated supply and
requires a bypass capacitor. Voltage is supplied through this pin to the
first stage collector; this voltage also controls the bias. Gain may be
tuned by adjusting the value of the feed inductor.
Interface Schematic
4
5
6
RF IN
GND
VCC
Application Schematic
RF IN
100 pF
4
5
4.7 nH
ATT
ATT
3
2
1
3.3 nH
Note orientation of
package in this schematic.
47 nF
1 pF
GC
VCC
47 nF
6
RF OUT
VCC
W-CDMA Application Schematic
2.2 nH
RF IN
0.5 pF
4.7 nH
VCC
29 nH
15 pF
Note orientation of
package in this schematic.
15 pF
2.7 nH
29 nH
VCC
1 uF
6
1
15 pF
4
5
ATT
ATT
3
2
1.2 pF
RF OUT
47 nF
GC
4-434
Rev A11 020607
RF2377
Evaluation Board Schematic
(W-CDMA)
P1
P1-1
1
2
P1-3
P1-4
3
4
5
C2
0.5 pF
J1
RF IN
50
Ω μstrip
L1
2.2 nH
L4
47 nH
VREG/VCC
C3
15 pF
L2
4.7 nH
2377401-
VGC
GND
VREG/VCC
VREG/VCC
GND
C1
15 pF
C7
0.5 pF
4
5
6
ATT
ATT
3
2
1
L3
2.7 nH
C5
15 pF
L5
47 nH
VREG/VCC
+ C16
1
μF
C6
1.2 pF
C4
47 nF
J2
RF OUT
VGC
Note orientation of
package in this schematic.
Evaluation Board Schematic
(PCS)
P1
P1-1
1
2
P1-3
P1-4
3
4
5
C1
100 pF
R1
0 kΩ
4
L2
4.7 nH
VREG
C3
47 nF
5
6
ATT
ATT
3
2
1
GND
C4
47 nF
VGC
L3
2.2 nH
VGC
GND
VCC
VREG/VCC
C16
1 uF
C5
47 nF
C6
1.2 pF
J1
RF IN
+
J2
RF OUT
Note orientation of
package in this schematic.
2377400A
Rev A11 020607
4-435
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