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RA07N4047M_06

Description
400 MHz - 470 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size92KB,8 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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RA07N4047M_06 Overview

400 MHz - 470 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

RA07N4047M_06 Parametric

Parameter NameAttribute value
Maximum operating temperature90 Cel
Minimum operating temperature-30 Cel
Maximum input power14.77 dBm
Maximum operating frequency470 MHz
Minimum operating frequency400 MHz
Processing package descriptionROHS COMPLIANT, H46S, 4 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
Maximum voltage standing wave ratio4
structuremodule
terminal coatingNOT SPECIFIED
Impedance characteristics50 ohm
Microwave RF TypeNARROW band high POWER

RA07N4047M_06 Related Products

RA07N4047M_06 RA07N4047M RA07N4047M-101
Description 400 MHz - 470 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 400 MHz - 470 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 400 MHz - 470 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
Maximum operating temperature 90 Cel 90 Cel 90 °C
Minimum operating temperature -30 Cel -30 Cel -30 °C
Maximum operating frequency 470 MHz 470 MHz 470 MHz
Minimum operating frequency 400 MHz 400 MHz 400 MHz
Maximum voltage standing wave ratio 4 4 4
structure module module MODULE
Maximum input power 14.77 dBm 14.77 dBm -
Processing package description ROHS COMPLIANT, H46S, 4 PIN ROHS COMPLIANT, H46S, 4 PIN -
Lead-free Yes Yes -
EU RoHS regulations Yes Yes -
state ACTIVE ACTIVE -
terminal coating NOT SPECIFIED NOT SPECIFIED -
Impedance characteristics 50 ohm 50 ohm -
Microwave RF Type NARROW band high POWER NARROW band high POWER -
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