FMMT620
SuperSOT™
80V NPN SILICON LOW SATURATION TRANSISTOR
SUMMARY
V
CEO
=80V; R
SAT
= 90m ; I
C
= 1.5A
DESCRIPTION
Enhancing the existing SuperSOT range this 80V NPN transistor utilises the
Zetex matrix structure combined with advanced assembly techniques. Users
are provided with high Hfe and very low sat performance ensuring low on
state losses.
FEATURES
•
•
•
•
•
•
•
•
•
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 3.0A
I
C
=1.5A Continuous Collector Current
SOT23 package
SOT23
APPLICATIONS
DC - DC Modules
Power Management Functions
CCFL Backlighting Inverters
Motor control and drive functions
E
C
B
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
Top View
ORDERING INFORMATION
DEVICE
FMMT620TA
FMMT620TC
REEL SIZE
(inches)
7
13
DEVICE MARKING
620
ISSUE 2 - JUNE 2006
1
SEMICONDUCTORS
FMMT620
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
LIMIT
80
80
5
5
1.5
500
625
5
806
6.4
-55 to +150
UNIT
V
V
V
A
A
mA
mW
mW/°C
mW
mW/°C
°C
P
D
T
j
:T
stg
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
200
155
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
ISSUE 2 - JUNE 2006
SEMICONDUCTORS
2
FMMT620
TYPICAL CHARACTERISTICS
10
0.7
Max Power Dissipation (W)
I
C
Collector Current (A)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
140
160
1
DC
1s
100ms
10ms
1ms
100µs
Single Pulse T
amb
=25°C
100m
10m
100m
1
10
100
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
200
Derating Curve
Thermal Resistance (°C/W)
150
D=0.5
100
D=0.2
Single Pulse
D=0.05
D=0.1
50
0
100µ
1m
10m
100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
ISSUE 2 - JUNE 2006
3
SEMICONDUCTORS
FMMT620
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
15
45
145
160
0.86
0.82
200
300
110
60
20
100
450
450
170
90
30
10
160
11.5
86
1128
18
MIN.
100
80
7
TYP.
180
110
8
100
100
100
20
60
185
200
1.0
0.95
900
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
CONDITIONS.
I
C
=100 A
I
C
=10mA*
I
E
=100 A
V
CB
=80V
V
EB
=5.5V
V
CES
=80V
I
C
=0.1A, I
B
=10mA*
I
C
=0.5A, I
B
=50mA*
I
C
=1A, I
B
=20mA*
I
C
=1.5A, I
B
=50mA*
I
C
=1.5A, I
B
=50mA*
I
C
=1.5A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=1.5A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
MHz
pF
ns
ns
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
V
CC
=10V, I
C
=500mA
I
B1
=I
B2
=25mA
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
ISSUE 2 - JUNE 2006
SEMICONDUCTORS
4
FMMT620
TYPICAL CHARACTERISTICS
ISSUE 2 - JUNE 2006
5
SEMICONDUCTORS
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