6MBI20S-060 datasheet, PDF - EEWORLD Datasheet

6MBI20S-060: DescriptionInsulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel; CategoryDiscrete semiconductor The transistor; File Size849KB，2 Pages; ManufacturerFuji Electric Co., Ltd.

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6MBI20S-060 Overview

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

Parameter Name	Attribute value
Maker	Fuji Electric Co., Ltd.
package instruction	FLANGE MOUNT, R-XUFM-P17
Reach Compliance Code	unknown
Maximum collector current (IC)	20 A
Collector-emitter maximum voltage	600 V
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code	R-XUFM-P17
Number of components	6
Number of terminals	17
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	UPPER
Transistor component materials	SILICON
Nominal off time (toff)	450 ns
Nominal on time (ton)	700 ns
Base Number Matches	1

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