FDS9933
September 2006
FDS9933
Dual P-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Features
•
–5 A, –20 V,
R
DS(ON)
= 55 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 90 mΩ @ V
GS
= –2.5 V
•
Extended V
GSS
range (±12V) for battery applications
•
Low gate charge
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
Applications
•
•
•
•
Load switch
Motor drive
DC/DC conversion
Power management
D2
D
D2
D
D
D1
D1
D
5
6
7
Q1
4
3
2
Q2
SO-8
Pin 1
SO-8
G2
S2
S
G1
S1
G
S
8
1
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–20
±12
(Note 1a)
Units
V
V
A
W
–5
–30
2
1.6
1
0.9
–55 to +175
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
9933
©2006
Fairchild Semiconductor International
Device
FDS9933
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDS9933 Rev C
FDS9933
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –16 V,
V
GS
= ±12 V,
V
GS
= 0 V
V
DS
= 0 V
Min
–20
Typ
Max Units
V
Off Characteristics
–12
–1
±100
mV/°C
µA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –4.5 V,
V
GS
= –2.5 V,
V
GS
= –4.5 V,
V
DS
= –9 V,
V
DS
= –10 V,
f = 1.0 MHz
I
D
= –3.2 A
I
D
= –1.0 A
V
DS
= –5 V
I
D
= –3.4 A
V
GS
= 0 V,
–0.6
–0.8
3
44
72
–1.2
V
mV/°C
55
90
mΩ
A
–16
8
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
825
420
150
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
16
46
40
25
40
80
70
40
20
ns
ns
ns
ns
nC
nC
nC
V
DS
= –6 V,
V
GS
= –4.5 V
I
D
= –3.2A,
10
2.1
3.3
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= –2.0 A
(Note 2)
–2.0
–0.7
–1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in
2
pad of 2
oz copper
b)
125°C/W when
mounted on a
2
0.02 in pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS9933 Rev C
FDS9933
Typical Characteristics:
30
1.8
V
GS
= -4.5V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-3.5V
V
-3.0V
V
GS
=-2.5V
1.6
-I
D
, DRAIN CURRENT (A)
20
-4.0V
V
1.4
-3.0V
1.2
-2.5V
10
-3.5V
-4.0V
-4.5V
-2.0V
1
0
0
1
2
3
4
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
5
0.8
0
6
12
18
-I
D
, DRAIN CURRENT (A)
24
30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.14
1.4
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -2.5A
R
DS(ON)
, ON-RESISTANCE (OHM)
1.3
I
D
= -5A
V
GS
= -4.5V
0.12
1.2
0.1
1.1
0.08
T
A
= 125 C
0.06
o
1
T
A
= 25
o
C
0.04
0.9
0.8
-50
-25
0
25
50
75
100
o
T
J
, JUNCTION TEMPERATURE ( C)
125
150
0.02
0
2
4
6
8
-V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
30
-I
S
, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
DS
= -5V
25
-I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
125 C
o
o
V
GS
=0V
10
25 C
20
1
15
0.1
T
A
= 125 C
25
o
C
-55
o
C
o
10
0.01
5
0.001
0
0
1
2
3
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
5
0.0001
0
0.4
0.8
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS9933 Rev C
FDS9933
Typical Characteristics:
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
1600
I
D
= -5A
4
V
DS
= -4V
-8V
CAPACITANCE (pF)
1200
f = 1 MHz
V
GS
= 0 V
-6V
3
C
iss
800
2
C
oss
400
1
C
rss
0
0
2
4
6
Q
g
, GATE CHARGE (nC)
8
10
0
0
4
8
12
16
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 7. Gate Charge Characteristics.
100
R
DS(ON)
LIMIT
-I
D
, DRAIN CURRENT (A)
10
1s
10s
1
DC
V
GS
= -4.5V
SINGLE PULSE
R
θJA
= 135
o
C/W
T
A
= 25 C
0.01
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
o
Figure 8. Capacitance Characteristics.
50
100µs
1ms
10ms
100ms
P(pk), PEAK TRANSIENT POWER (W)
40
SINGLE PULSE
R
θJA
= 135°C/W
T
A
= 25°C
30
20
0.1
10
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 135 C/W
o
0.1
0.1
0.05
P(pk)
0.02
0.01
0.01
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS9933 Rev C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I
2
C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
Across the board. Around the world.™
The Power Franchise
®
Programmable Active Droop™
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FAST
®
FASTr™
FPS™
FRFET™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
®
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC™
UniFET™
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®
VCX™
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I20
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