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FDC604P_01

Description
5500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size86KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FDC604P_01 Overview

5500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

FDC604P_01 Parametric

Parameter NameAttribute value
Number of terminals6
Minimum breakdown voltage20 V
Processing package descriptionSUPERSOT-6
Lead-freeYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeP channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeUniversal small signal
Maximum leakage current5.5 A
Maximum drain on-resistance0.0310 ohm

FDC604P_01 Related Products

FDC604P_01 FDC604P
Description 5500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 5500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals 6 6
surface mount Yes YES
Terminal form GULL WING GULL WING
Terminal location pair DUAL
Number of components 1 1
transistor applications switch SWITCHING
Transistor component materials silicon SILICON

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