5500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Parameter Name | Attribute value |
Number of terminals | 6 |
Minimum breakdown voltage | 20 V |
Processing package description | SUPERSOT-6 |
Lead-free | Yes |
state | ACTIVE |
packaging shape | Rectangle |
Package Size | SMALL OUTLINE |
surface mount | Yes |
Terminal form | GULL WING |
terminal coating | MATTE Tin |
Terminal location | pair |
Packaging Materials | Plastic/Epoxy |
structure | Single WITH BUILT-IN diode |
Number of components | 1 |
transistor applications | switch |
Transistor component materials | silicon |
Channel type | P channel |
field effect transistor technology | Metal-OXIDE SEMICONDUCTOR |
operating mode | ENHANCEMENT |
Transistor type | Universal small signal |
Maximum leakage current | 5.5 A |
Maximum drain on-resistance | 0.0310 ohm |
FDC604P_01 | FDC604P | |
---|---|---|
Description | 5500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 5500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
Number of terminals | 6 | 6 |
surface mount | Yes | YES |
Terminal form | GULL WING | GULL WING |
Terminal location | pair | DUAL |
Number of components | 1 | 1 |
transistor applications | switch | SWITCHING |
Transistor component materials | silicon | SILICON |