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DDTC113ZE_1

Description
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size68KB,5 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

DDTC113ZE_1 Overview

100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

DDTC113ZE_1 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage50 V
Processing package descriptionGREEN, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN RESISTOR
Number of components1
Transistor component materialsSILICON
Maximum ambient power consumption0.1500 W
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor30
Rated crossover frequency250 MHz
DDTC
(R1¹R2 SERIES)
E
NPN PRE-BIASED SMALL SIGNAL SOT-523
SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
·
·
·
·
·
·
·
·
·
Epitaxial Planar Die Construction
Complementary PNP Types Available
(DDTA)
Built-In Biasing Resistors, R1¹R2
Lead Free/RoHS Compliant (Note 2)
G
H
K
M
TOP VIEW
B C
A
SOT-523
Dim
A
B
C
D
G
N
Min
0.15
0.75
1.45
¾
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
¾
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
¾
Mechanical Data
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Terminal Connections: See Diagram
Marking: Date Code and Marking Code
(See Diagrams & Page 3)
Weight: 0.002 grams (approximate)
Ordering Information (See Page 2)
J
H
J
K
L
M
N
D
L
OUT
3
C
B
R1
R2
a
All Dimensions in mm
P/N
DDTC113ZE
DDTC123YE
DDTC123JE
DDTC143XE
DDTC143FE
DDTC143ZE
DDTC114YE
DDTC114WE
DDTC124XE
DDTC144VE
DDTC144WE
R1
(NOM)
1KW
2.2KW
2.2KW
4.7KW
4.7KW
4.7KW
10KW
10KW
22KW
47KW
47KW
R2
(NOM)
10KW
10KW
47KW
10KW
22KW
47KW
47KW
4.7KW
47KW
10KW
22KW
MARKING
N02
N05
N06
N09
N10
N11
N14
N15
N18
N21
N22
IN
E
B
1
3
C OUT
1
IN
2
GND(0)
GND (0)
Schematic and Pin Configuration
Equivalent Inverter Circuit
Maximum Ratings
Supply Voltage, (3) to (2)
Input Voltage, (1) to (2)
@ T
A
= 25°C unless otherwise specified
Symbol
V
CC
DDTC113ZE
DDTC123YE
DDTC123JE
DDTC143XE
DDTC143FE
DDTC143ZE
DDTC114YE
DDTC114WE
DDTC124XE
DDTC144VE
DDTC144WE
DDTC113ZE
DDTC123YE
DDTC123JE
DDTC143XE
DDTC143FE
DDTC143ZE
DDTC114YE
DDTC114WE
DDTC124XE
DDTC144VE
DDTC144WE
All
Value
50
-5 to +10
-5 to +12
-5 to +12
-7 to +20
-6 to +30
-5 to +30
-6 to +40
-10 to +30
-10 to +40
-15 to +40
-10 to +40
100
100
100
100
100
100
70
100
50
30
30
100
150
833
-55 to +150
Unit
V
Characteristic
V
IN
2
E
V
Output Current
I
O
mA
Output Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note:
I
C
(Max)
P
d
R
qJA
T
j
, T
STG
mA
mW
°C/W
°C
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30314 Rev. 8 - 2
1 of 5
www.diodes.com
DDTC (R1¹R2 SERIES) E
ã
Diodes Incorporated

DDTC113ZE_1 Related Products

DDTC113ZE_1 DDTC143XE-7-F DDTC114YE-7-F DDTC114WE-7-F
Description 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR 70 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3 3 3
Transistor polarity NPN NPN NPN NPN
Maximum collector current 0.1000 A 0.1000 A 0.0700 A 0.1000 A
Maximum Collector-Emitter Voltage 50 V 50 V 50 V 50 V
Processing package description GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3
Lead-free Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes
China RoHS regulations Yes Yes Yes Yes
state ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING
terminal coating MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Terminal location DUAL DUAL DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Number of components 1 1 1 1
Transistor component materials SILICON SILICON SILICON SILICON
Maximum ambient power consumption 0.1500 W 0.1500 W 0.1500 W 0.1500 W
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor 30 30 68 30
Rated crossover frequency 250 MHz 250 MHz 250 MHz 250 MHz

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