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2SA1585S

Description
Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92S, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size48KB,1 Pages
ManufacturerMicro Commercial Components (MCC)
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2SA1585S Overview

Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92S, 3 PIN

2SA1585S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
Parts packaging codeTO-92S
package instructionIN-LINE, R-PSIP-P3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSIP-P3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SA1585S
2SA1585S-Q
2SA1585S-R
PNP
Plastic-Encapsulate
Transistors
Features
Power dissipation: P
D
= 0.4W(T
amb
=25 )
Collector current: I
CM
= -2A
Collector-base voltage: V
(BR)CBO
= -20V
Operating and storage junction temperature range
T
J
, T
stg
: -55 to + 150
Electrical Characteristics @ 25
Symbol
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Unless Otherwise Specified
Min
-20
-20
-6.0
---
---
120
---
200
Typ
---
---
---
---
---
---
---
---
Max
---
---
---
-0.1
-0.1
390
-0.82
---
Unit
V
V
V
Parameter
Collector-Emitter Voltage
(I
C
=-50­A, I
E
=0)
Collector-Base Voltage
(I
C
=-1­A, I
B
=0)
Emitter-Base Voltage
(I
E
=-50­A, I
C
=0)
Collector cut-off Current
(V
CB
=-20V, I
E
=0)
Emitter cut-off Current
(V
EB
=-5V, I
C
=0)
DC current gain
(V
CE
=-2V, I
C
=-0.1A)
Collector-Emitter Saturation Voltage
(I
C
=-2A, I
B
=-0.1A)
Transition Frequency
(V
CE
=2.0Vdc, I
C
=0.5Adc)
TO-92S
A
E
B
­A
­A
---
V
MHz
C
CLASSIFICATION OF h
FE
Rank
Range
Marking
Q
120-170
1815Q
R
180-390
1815R
1
2
3
D

1.EMITTER
2.COLLECTOR
3.BASE
G
DIMENSIONS
INCHES
MIN
MAX
.16
.12
.59
---
.02
.08
.20
MM
MIN
4.00
3.00
15.00
0.45
2.00
5.00
---
MAX
NOTE
DIM
A
B
C
D
E
G
www.mccsemi.com
Revision: 2
2007/03/02

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2SA1585S 2SA1585S-Q 2SA1585S-Q-B 2SA1585S-Q-A 2SA1585S-R 2SA1585S-R-B 2SA1585S-A
Description Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92S, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92S, 3 PIN Transistor Transistor Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92S, 3 PIN Transistor Transistor
Reach Compliance Code compliant compli unknow unknow compli unknow unknow
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Terminal surface TIN LEAD TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Is it Rohs certified? incompatible - incompatible incompatible - incompatible incompatible
Base Number Matches 1 1 1 1 1 1 -

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