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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D049
PMEG2020AEA
20 V, 2 A very low V
F
MEGA
Schottky barrier rectifier in SOD323
(SC-76) package
Product data sheet
2004 Feb 26
NXP Semiconductors
Product data sheet
20 V, 2 A very low V
F
MEGA Schottky
barrier rectifier in SOD323 (SC-76) package
FEATURES
•
Forward current: 2 A
•
Reverse voltage: 20 V
•
Very low forward voltage
•
Very small SMD package.
PINNING
APPLICATIONS
•
Low voltage rectification
•
High efficiency DC/DC conversion
•
Switch mode power supply
•
Inverse polarity protection
•
Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very
small SMD plastic package.
MARKING
TYPE NUMBER
PMEG2020AEA
MARKING CODE
S3
1
PMEG2020AEA
QUICK REFERENCE DATA
SYMBOL
I
F
V
R
PARAMETER
forward current
reverse voltage
VALUE
2
20
A
V
UNIT
PIN
1
2
DESCRIPTION
cathode
anode
2
MHC682
The marking bar indicates the cathode.
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
RELATED PRODUCTS
TYPE NUMBER
PMEG1020EA
PMEG2010EA
DESCRIPTION
2 A; 10 V ultra low V
F
MEGA Schottky barrier
rectifier
1 A; 20 V ultra low V
F
MEGA Schottky barrier
rectifier
FEATURES
SOD323 package; lower reverse voltage; lower
forward voltage
SOD323 package; lower forward current; lower
reverse current and diode capacitance
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PMEG2020AEA
−
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD323
2004 Feb 26
2
NXP Semiconductors
Product data sheet
20 V, 2 A very low V
F
MEGA Schottky
barrier rectifier in SOD323 (SC-76) package
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
PARAMETER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
T
sp
≤
55
°C
t
p
≤
1 ms;
δ ≤
0.25
t = 8 ms square wave
CONDITIONS
−
−
−
−
−65
−
−65
PMEG2020AEA
MIN.
2
7
9
MAX.
20
V
A
A
A
UNIT
+150
150
+150
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
R
th(j-a)
R
th(j-s)
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and
I
F
(AV) rating will be available on request.
3. Device mounted on a on an FR4 printed-circuit board with copper clad 10 x 10 mm.
4. Soldering point of cathode tab.
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
see Fig.2; note 1
I
F
= 0.01 A
I
F
= 0.1 A
I
F
= 1 A
I
F
= 2 A
I
R
reverse current
V
R
= 5 V; see Fig.3
V
R
= 10 V
V
R
= 20 V
C
d
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
diode capacitance
V
R
= 5 V; f = 1 MHz; see Fig.4
200
265
380
450
15
20
50
55
220
290
430
525
50
80
200
70
mV
mV
mV
mV
μA
μA
μA
pF
TYP.
MAX.
UNIT
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to ambient
thermal resistance from junction to solder point
CONDITIONS
notes 1 and 2
notes 2 and 3
note 4
VALUE
450
210
90
UNIT
K/W
K/W
K/W
2004 Feb 26
3
NXP Semiconductors
Product data sheet
20 V, 2 A very low V
F
MEGA Schottky
barrier rectifier in SOD323 (SC-76) package
GRAPHICAL DATA
10
4
MDB823
PMEG2020AEA
handbook, halfpage
IF
10
2
handbook, halfpage
IR
(mA)
10
(1)
MDB825
(mA)
10
3
10
2
(1)
(2)
(3)
(4)
1
(2)
10
10
−1
(3)
1
10
−2
10
−1
10
−3
0
0.1
0.2
0.3
0.4
VF (V)
0.5
10
−4
(4)
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
(4) T
amb
=
−40 °C.
10
−5
Fig.2
Forward current as a function of forward
voltage; typical values.
0
5
10
15
VR (V)
20
handbook, halfpage
200
MDB824
(1)
(2)
(3)
(4)
T
amb
= 125
°C.
T
amb
= 85
°C.
T
amb
= 25
°C.
T
amb
=
−40 °C.
Cd
(pF)
150
Fig.3
Reverse current as a function of reverse
voltage; typical values.
100
50
0
0
5
10
15 V (V) 20
R
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2004 Feb 26
4
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