Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
2N3791 2N3792
·With
TO-3 package
·Complement
to type 2N3715 ,2N3716
·Excellent
safe operating area
APPLICATIONS
Designed for medium-speed switching
and amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(Ta=25
℃)
SYMBOL
PARAMETER
2N3791
V
CBO
Collector-base voltage
2N3792
2N3791
V
CEO
Collector-emitter voltage
2N3792
V
EBO
I
C
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-80
-7
-10
-4
150
200
-65~200
V
A
A
W
℃
℃
Open emitter
-80
-60
V
CONDITIONS
VALUE
-60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
(th) jc
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N3791
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N3792
Collector-emitter saturation voltage
Base-emitter on voltage
Base-emitter on voltage
2N3791
I
CEX
Collector
cut-off current
2N3792
I
EBO
h
FE-1
h
FE-2
f
T
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
I
C
=-5A; I
B
=-0.5A
I
C
=-5A ; V
CE
=-2V
I
C
=-10A ; V
CE
=-4V
V
CE
=-60V; V
BE(off)
=-1.5V
T
C
=150℃
V
CE
=-80V; V
BE(off)
=-1.5V
T
C
=150℃
V
EB
=-7V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-3A ; V
CE
=-2V
I
C
=-0.5A;V
CE
=-10V
50
30
4
I
C
=-0.2A ;I
B
=0
-80
CONDITIONS
MIN
-60
2N3791 2N3792
TYP.
MAX
UNIT
V
V
V
CE(sat)
V
BE(on)-1
V
BE(on)-2
-1.0
-1.8
-4.0
-1.0
-5.0
-1.0
-5.0
-5.0
180
V
V
V
mA
mA
mA
MHz
2
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