SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY TRANSISTOR
*
Feature:
Shandong Yiguang Electronic Joint stock Co., Ltd
2SD1781K
NPN EPITAXIAL SILICON TRANSISTO
R
(1) Very Low Vce(sat)
Vce<0.4V
(Ic/Ib= 500mA/50mA)
(2) High current capacity in compact package
(3) Complements the 2SB1197K
Package:
SOT-23
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vceo
Vcbo
Ic
P
D
Tj
Tstg
Rating
32
40
0.8
200
150
-55-150
Unit
PIN:
1
2
3
V
V
A(DC)
mW
℃
℃
STYLE
NO.1
B
E
C
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Symbol
BVcbo
BVceo
BVebo
Icbo
Iebo
Hfe
Vce(sat)
Cob
f
T
10
150
120
Min
40
32
5
0.5
0.5
390
0.4
V
PF
MHz
Typ
Max
Unit
V
V
V
uA
uA
Test Conditions
Ic= 50uA
Ic= 1mA
Ie= 50uA
Vcb= 20V
Veb=4V
Vce= 3V Ic= 100mA
Ic= 500mA Ib= 50mA
Vcb= 10V Ie=0 f=1MHz
Vce= 5V Ie= -50mA
f=100MHZ
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test: Pulse Width
≤300uS,Duty
cycle
≤2%
DEVICE MARKING:
2SD1781K=AFR
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
2SD1781K
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
2SD1781K
京公网安备 11010802033920号
EEWORLD
