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2SC1815-GR(TPE2,F)

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size256KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC1815-GR(TPE2,F) Overview

Small Signal Bipolar Transistor

2SC1815-GR(TPE2,F) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
2SC1815
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC1815
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
High voltage and high current:
V
CEO
= 50 V (min),
I
C
= 150 mA (max)
Unit: mm
Excellent h
FE
linearity: h
FE (2)
= 100 (typ.)
at V
CE
= 6 V, I
C
= 150 mA
: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA)
= 0.95 (typ.)
Low noise: NF = 1dB (typ.) at f = 1 kHz
Complementary to 2SA1015 (O, Y, GR class)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
60
50
5
150
50
400
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Weight: 0.21 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Symbol
I
CBO
I
EBO
h
FE (1)
DC current gain
(Note)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
V
CE (sat)
V
BE (sat)
f
T
C
ob
r
bb’
Test Condition
V
CB
=
60 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
6 V, I
C
=
2 mA
V
CE
=
6 V, I
C
=
150 mA
I
C
=
100 mA, I
B
=
10 mA
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
10 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
=
10 V, I
E
= −1
mA
f
=
30 MHz
V
CE
=
6 V, I
C
=
0.1 mA
f
=
1 kHz, R
G
=
10 kΩ
Min
70
25
80
Typ.
100
0.1
2.0
50
Max
0.1
0.1
700
0.25
1.0
3.5
V
V
MHz
pF
Ω
Unit
μA
μA
Noise figure
NF
1.0
10
dB
Note: h
FE
classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
1
2007-11-01

2SC1815-GR(TPE2,F) Related Products

2SC1815-GR(TPE2,F) 2SC1815-Y(TPE2,F) 2SC1815-Y(T) 2SC1815-GR(F) 2SC1815-BL(T) 2SC1815-BL(TPE2,F) 2SC1815-BL(TE2FT 2SC1815-GR/BL(TPE2)
Description Small Signal Bipolar Transistor 150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),TO-92 TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),TO-92 TRANSISTOR,BJT,NPN,50V V(BR)CEO,150MA I(C),TO-92 Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Reach Compliance Code unknown unknow unknown unknown unknown unknown unknown unknow
Maker Toshiba Semiconductor - Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor

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