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RFD16N05L

Description
16 A, 50 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
CategoryDiscrete semiconductor    The transistor   
File Size127KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

RFD16N05L Overview

16 A, 50 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

RFD16N05L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-251AA
package instructionTO-251, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresMEGAFET
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (Abs) (ID)16 A
Maximum drain current (ID)16 A
Maximum drain-source on-resistance0.056 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251AA
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)60 W
Maximum pulsed drain current (IDM)45 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
RFD16N05L, RFD16N05LSM
Data Sheet
December 2003
16A, 50V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel logic level power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor relay
drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.
Formerly developmental type TA09871.
Features
• 16A, 50V
• r
DS(ON)
= 0.047Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
RFD16N05L
RFD16N05LSM
PACKAGE
TO-251AA
TO-252AA
BRAND
RFD16N05L
RFD16N05LSM
Symbol
D
NOTE: When ordering, include the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e. RFD16N05LSM9A
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
©2003 Fairchild Semiconductor Corporation
RFD16N05L, RFD16N05LSM Rev. B1

RFD16N05L Related Products

RFD16N05L RFD16N05LSM
Description 16 A, 50 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 16 A, 50 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Is it Rohs certified? incompatible conform to
Maker Fairchild Fairchild
Parts packaging code TO-251AA DPAK
package instruction TO-251, 3 PIN TO-252AA, 3 PIN
Contacts 3 3
Reach Compliance Code unknow _compli
ECCN code EAR99 EAR99
Other features MEGAFET MEGAFET
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 50 V 50 V
Maximum drain current (Abs) (ID) 16 A 16 A
Maximum drain current (ID) 16 A 16 A
Maximum drain-source on-resistance 0.056 Ω 0.056 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-251AA TO-252AA
JESD-30 code R-PSIP-T3 R-PSSO-G2
JESD-609 code e0 e3
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 60 W 60 W
Maximum pulsed drain current (IDM) 45 A 45 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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