ON SEMICONDUCTOR - NJD2873T4G - BIPOLAR TRANSISTOR; NPN; 50V; 2A; TO-252
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | ON Semiconductor |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 |
| Manufacturer packaging code | CASE 369C-01 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 2 A |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 40 |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 15 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 65 MHz |
| NJD2873G | NJD2873T4_06 | NJD2873RLG | |
|---|---|---|---|
| Description | ON SEMICONDUCTOR - NJD2873T4G - BIPOLAR TRANSISTOR; NPN; 50V; 2A; TO-252 | ON SEMICONDUCTOR - NJD2873T4G - BIPOLAR TRANSISTOR; NPN; 50V; 2A; TO-252 | ON SEMICONDUCTOR - NJD2873T4G - BIPOLAR TRANSISTOR; NPN; 50V; 2A; TO-252 |
| Is it lead-free? | Lead free | - | Lead free |
| Is it Rohs certified? | conform to | - | conform to |
| Maker | ON Semiconductor | - | ON Semiconductor |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | - | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 | - | 3 |
| Manufacturer packaging code | CASE 369C-01 | - | CASE 369C-01 |
| Reach Compliance Code | compli | - | compli |
| ECCN code | EAR99 | - | EAR99 |
| Shell connection | COLLECTOR | - | COLLECTOR |
| Maximum collector current (IC) | 2 A | - | 2 A |
| Collector-emitter maximum voltage | 50 V | - | 50 V |
| Configuration | SINGLE | - | SINGLE |
| Minimum DC current gain (hFE) | 40 | - | 40 |
| JESD-30 code | R-PSSO-G2 | - | R-PSSO-G2 |
| JESD-609 code | e3 | - | e3 |
| Number of components | 1 | - | 1 |
| Number of terminals | 2 | - | 2 |
| Maximum operating temperature | 175 °C | - | 175 °C |
| Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | - | RECTANGULAR |
| Package form | SMALL OUTLINE | - | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | - | 260 |
| Polarity/channel type | NPN | - | NPN |
| Maximum power dissipation(Abs) | 15 W | - | 15 W |
| Certification status | Not Qualified | - | Not Qualified |
| surface mount | YES | - | YES |
| Terminal surface | Matte Tin (Sn) | - | MATTE TIN |
| Terminal form | GULL WING | - | GULL WING |
| Terminal location | SINGLE | - | SINGLE |
| Maximum time at peak reflow temperature | 40 | - | 40 |
| transistor applications | AMPLIFIER | - | AMPLIFIER |
| Transistor component materials | SILICON | - | SILICON |
| Nominal transition frequency (fT) | 65 MHz | - | 65 MHz |
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