IRHE93230 datasheet, PDF - EEWORLD Datasheet

IRHE93230: DescriptionRADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18); CategoryDiscrete semiconductor The transistor; File Size106KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRHE93230 Overview

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Maker	International Rectifier （ Infineon ）
Parts packaging code	LCC
package instruction	CHIP CARRIER, R-CQCC-N15
Contacts	18
Reach Compliance Code	unknow
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	171 mJ
Shell connection	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	0.92 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N15
Number of components	1
Number of terminals	15
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	16 A
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	IRHE93230	IRHE9230
Description	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
Is it lead-free?	Contains lead	Contains lead
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	LCC	LCC
package instruction	CHIP CARRIER, R-CQCC-N15	CHIP CARRIER, R-CQCC-N15
Contacts	18	18
Reach Compliance Code	unknow	compli
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	171 mJ	171 mJ
Shell connection	SOURCE	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V
Maximum drain current (ID)	4 A	4 A
Maximum drain-source on-resistance	0.92 Ω	0.92 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N15	R-CQCC-N15
Number of components	1	1
Number of terminals	15	15
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	16 A	16 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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