UNISONIC TECHNOLOGIES CO., LTD
UN1066
HIGH SPEED SWITCHING
TRANSISTOR
FEATURES
* Low V
CE(SAT)
voltage, up to 3A
* Suitable for fast switching applications
* High current gain
NPN SILICON TRANSISTOR
*Pb-free plating product number: UN1066L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
UN1066-AB3-R
UN1066L-AB3-R
UN1066-TN3-R
UN1066L-TN3-R
UN1066-TN3-T
UN1066L-TN3-T
Package
SOT-89
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R209-023,B
UN1066
ABSOLUTE MAXIMUM RATING
(Ta=25℃)
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-to-Base Voltage
BV
CBO
20
V
Collector-to-Emitter Voltage
BV
CEO
15
V
Emitter-to-Base Voltage
BV
EBO
5
V
Collector Current
I
C
6
A
Collector Current (Pulse)
I
CP
9
A
Base Current
I
B
600
mA
Collector Dissipation(T
C
=25
℃
)
P
C
3.5
W
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time
SYMBOL
TEST CONDITIONS
BV
CBO
I
C
=10μ A, I
E
=0
BV
CEO
I
C
=1mA, R
BE
=∞
BV
EBO
I
E
=10μA, I
C
=0
I
C
=1.5A, I
B
=30mA
V
CE(SAT)
I
C
=3A, I
B
=60mA
V
BE(SAT)
I
C
=1.5A, I
B
=30mA
I
CBO
V
CB
=12V, I
E
=0
I
EBO
V
EB
=4V, I
C
=0
h
FE
V
CE
=0.5V, I
C
=5A
f
T
V
CE
=2V, I
C
=500mA
C
ob
V
CB
=10V, f=1MHz
t
ON
Refer to Test Circuit
t
STG
Refer to Test Circuit
t
F
Refer to Test Circuit
MIN
20
15
6
TYP
MAX
UNIT
V
V
V
mV
mV
V
µA
µA
MHz
pF
ns
ns
ns
180
300
1.2
0.1
0.1
250
100
50
50
250
25
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-023,B
UN1066
TEST CIRCUIT
I
B1
I
B2
R
B
PW=20µs
D.C.≤1%
INPUT
V
R
50Ω
100µF
V
BE
=-5V
20I
B1
=-20I
B2
=I
C
=1.5A
470µF
V
CC
=5V
NPN SILICON TRANSISTOR
OUTPUT
R
L
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-023,B
UN1066
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector Current, I
C
(A)
Collector-to-Emitter
Saturation Voltage, V
CE(SAT)
(mV)
V
CE(SAT)
vs. I
C
1000
6
4
2
100
6
4
2
10
5
0.01
0.1
1.0
Collector Current, I
C
(A)
10
I
C
/I
B
=50
Ta=25°C
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Base-to-Emitter
Saturation Voltage, V
BE(SAT)
(V)
DC Current Gain, h
FE
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UN1066
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-023,B
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