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1N1126A

Description
3.3 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size141KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
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1N1126A Overview

3.3 A, SILICON, RECTIFIER DIODE

1N1126A Parametric

Parameter NameAttribute value
MakerSSDI
Parts packaging codeDO-4
package instructionO-MUPM-D1
Contacts1
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresLOW LEAKAGE CURRENT
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-4
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current3.3 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time5 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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