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BSZ180P03NS3EGATMA1

Description
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
CategoryDiscrete semiconductor    The transistor   
File Size617KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSZ180P03NS3EGATMA1 Overview

MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3

BSZ180P03NS3EGATMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, S-PDSO-F5
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time26 weeks
Other featuresESD PROTECTED
Avalanche Energy Efficiency Rating (Eas)48 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)9 A
Maximum drain-source on-resistance0.018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PDSO-F5
JESD-609 codee3
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)158 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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