MOSFET SO-8 DUAL N-CH
Parameter Name | Attribute value |
Product Attribute | Attribute Value |
Manufacturer | Fairchild |
Product Category | MOSFET |
RoHS | N |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | SO-8 |
Number of Channels | 2 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 3.5 A |
Rds On - Drain-Source Resistance | 90 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Configuration | Dual Dual Drain |
Pd - Power Dissipation | 2 W |
Channel Mode | Enhancement |
Packaging | Cut Tape |
Packaging | Reel |
Height | 1.75 mm |
Length | 4.9 mm |
Transistor Type | 2 N-Channel |
Type | MOSFET |
Width | 3.9 mm |
Forward Transconductance - Min | 6 S |
Fall Time | 3 ns |
Rise Time | 11 ns |
Factory Pack Quantity | 5000 |
Typical Turn-Off Delay Time | 7 ns |
Typical Turn-On Delay Time | 3 ns |
Unit Weight | 0.006596 oz |
FDS6961A_Q | |
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Description | MOSFET SO-8 DUAL N-CH |
Product Attribute | Attribute Value |
Manufacturer | Fairchild |
Product Category | MOSFET |
RoHS | N |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | SO-8 |
Number of Channels | 2 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 3.5 A |
Rds On - Drain-Source Resistance | 90 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Configuration | Dual Dual Drain |
Pd - Power Dissipation | 2 W |
Channel Mode | Enhancement |
Height | 1.75 mm |
Length | 4.9 mm |
Transistor Type | 2 N-Channel |
Type | MOSFET |
Width | 3.9 mm |
Forward Transconductance - Min | 6 S |
Fall Time | 3 ns |
Rise Time | 11 ns |
Factory Pack Quantity | 5000 |
Typical Turn-Off Delay Time | 7 ns |
Typical Turn-On Delay Time | 3 ns |
Unit Weight | 0.006596 oz |
Packaging | Reel |