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FDS6961A_Q

Description
MOSFET SO-8 DUAL N-CH
Categorysemiconductor    Discrete semiconductor   
File Size104KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FDS6961A_Q Overview

MOSFET SO-8 DUAL N-CH

FDS6961A_Q Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerFairchild
Product CategoryMOSFET
RoHSN
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Number of Channels2 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current3.5 A
Rds On - Drain-Source Resistance90 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationDual Dual Drain
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Height1.75 mm
Length4.9 mm
Transistor Type2 N-Channel
TypeMOSFET
Width3.9 mm
Forward Transconductance - Min6 S
Fall Time3 ns
Rise Time11 ns
Factory Pack Quantity5000
Typical Turn-Off Delay Time7 ns
Typical Turn-On Delay Time3 ns
Unit Weight0.006596 oz

FDS6961A_Q Related Products

FDS6961A_Q
Description MOSFET SO-8 DUAL N-CH
Product Attribute Attribute Value
Manufacturer Fairchild
Product Category MOSFET
RoHS N
Technology Si
Mounting Style SMD/SMT
Package / Case SO-8
Number of Channels 2 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 3.5 A
Rds On - Drain-Source Resistance 90 mOhms
Vgs - Gate-Source Voltage 20 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Configuration Dual Dual Drain
Pd - Power Dissipation 2 W
Channel Mode Enhancement
Height 1.75 mm
Length 4.9 mm
Transistor Type 2 N-Channel
Type MOSFET
Width 3.9 mm
Forward Transconductance - Min 6 S
Fall Time 3 ns
Rise Time 11 ns
Factory Pack Quantity 5000
Typical Turn-Off Delay Time 7 ns
Typical Turn-On Delay Time 3 ns
Unit Weight 0.006596 oz
Packaging Reel

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