A Business Partner of Renesas Electronics Corporation.
NPN SiGe RF Transistor for Low Noise, High-Gain
Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG)
<R>
NESG3032M14
FEATURES
Preliminary
R09DS0048EJ0300
Rev.3.00
Sep 18, 2012
Data Sheet
• The NESG3032M14 is an ideal choice for low noise, high-gain amplification
• Maximum stable power gain: MSG = 20.5 dB TYP. @ V
CE
= 2 V, I
C
= 15 mA, f = 2.0 GHz
NF = 0.6 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: f
max
= 110 GHz
• 4-pin lead-less minimold (M14, 1208 PKG)
<R>
ORDERING INFORMATION
Part Number
NESG3032M14
Order Number
NESG3032M14-A
Package
4-pin lead-less minimold
(M14, 1208 PKG)
(Pb-Free)
Quantity
(Non reel)
10 kpcs/reel
50 pcs
Supplying Form
• Pin 1 (Collector), Pin 4 (NC) face the
perforation side of the tape
• 8 mm wide embossed taping
NESG3032M14-T3 NESG3032M14-T3-A
Remark
To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
12.0
4.3
1.5
35
150
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PWB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0048EJ0300 Rev.3.00
Sep 18, 2012
Page 1 of 13
A Business Partner of Renesas Electronics Corporation.
NESG3032M14
<R>
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure
Associated Gain
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output Power
3rd Order Intermodulation Distortion
Output Intercept Point
S
21e
NF
G
a
C
re
Note 2
Note 3
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 2 V, I
C
= 6 mA
−
−
220
−
−
300
100
100
380
nA
nA
−
V
CE
= 2 V, I
C
= 15 mA, f = 2.0 GHz
V
CE
= 2 V, I
C
= 6 mA, f = 2.0 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 2 V, I
C
= 6 mA, f = 2.0 GHz,
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CB
= 2 V, I
E
= 0, f = 1 MHz
V
CE
= 2 V, I
C
= 15 mA, f = 2.0 GHz
V
CE
= 3 V, I
C (set)
= 20 mA,
f = 2.0 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
V
CE
= 3 V, I
C (set)
= 20 mA,
f = 2.0 GHz, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
15.0
−
−
−
17.5
−
−
17.5
0.60
17.5
0.15
20.5
12.5
24.0
−
0.85
−
0.25
−
−
−
dB
dB
dB
pF
dB
dBm
dBm
MSG
P
O (1 dB)
OIP
3
Notes 1.
Pulse measurement: PW
≤
350 s, Duty Cycle
≤
2%
3.
MSG =
<R>
S
21
S
12
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB/YFB
zN
220 to 380
R09DS0048EJ0300 Rev.3.00
Sep 18, 2012
Page 2 of 13
A Business Partner of Renesas Electronics Corporation.
NESG3032M14
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
Mounted on Glass Epoxy PWB
(1.08 cm
2
×
1.0 mm (t) )
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
0.30
0.25
0.20
0.15
0.10
0.05
0
0
2
4
6
8
10
12
f = 1 MHz
250
200
150
100
50
0
25
50
75
100
125
150
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
100
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
100
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
Collector Current I
C
(mA)
1
0.1
0.01
0.001
0.5
0.6
0.7
0.8
0.9
1.0
Collector Current I
C
(mA)
10
10
1
0.1
0.01
0.001
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.0001
0.4
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
100
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
35
200
μ
A
180
μ
A
160
μ
A
140
μ
A
120
μ
A
100
μ
A
80
μ
A
60
μ
A
40
μ
A
I
B
= 20
μ
A
1
2
3
4
5
Collector Current I
C
(mA)
Collector Current I
C
(mA)
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
10
1
0.1
0.01
0.001
30
25
20
15
10
5
0
0.0001
0.4
Collector to Emitter Voltage V
CE
(V)
Remark
The graphs indicate nominal characteristics.
R09DS0048EJ0300 Rev.3.00
Sep 18, 2012
Page 3 of 13
A Business Partner of Renesas Electronics Corporation.
NESG3032M14
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 1 V
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
DC Current Gain h
FE
100
DC Current Gain h
FE
100
10
0.1
1
10
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 3 V
DC Current Gain h
FE
100
10
0.1
1
10
100
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
R09DS0048EJ0300 Rev.3.00
Sep 18, 2012
Page 4 of 13
A Business Partner of Renesas Electronics Corporation.
NESG3032M14
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
Gain Bandwidth Product f
T
(GHz)
25
20
15
10
5
0
1
Gain Bandwidth Product f
T
(GHz)
10
Collector Current I
C
(mA)
100
V
CE
= 1 V
f = 2 GHz
25
20
15
10
5
0
1
V
CE
= 2 V
f = 2 GHz
10
Collector Current I
C
(mA)
100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
30
25
20
15
10
5
0
0.1
1
10
100
|S
21e
|
2
Gain Bandwidth Product f
T
(GHz)
25
20
15
10
5
0
1
V
CE
= 3 V
f = 2 GHz
V
CE
= 1 V
I
C
= 15 mA
MSG
MAG
MAG
MSG
10
Collector Current I
C
(mA)
100
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1
1
10
100
|S
21e
|
2
MSG
MAG
MAG
MSG
V
CE
= 2 V
I
C
= 15 mA
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
20
15
10
5
0
0.1
1
10
100
|S
21e
|
2
40
V
CE
= 3 V
I
C
= 15 mA
MSG
MAG
MAG
MSG
Frequency f (GHz)
Frequency f (GHz)
Remark
The graphs indicate nominal characteristics.
R09DS0048EJ0300 Rev.3.00
Sep 18, 2012
Page 5 of 13
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