®
STBV68
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STBV68 is designed for use in compact
fluorescent lamp application.
TO-92
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
b
O
V
CEO
V
EBO
I
C
I
B
I
BM
P
tot
T
stg
T
j
I
CM
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t(
so
b
-O
INTERNAL SCHEMATIC DIAGRAM
P
te
le
od
r
s)
t(
uc
Parameter
Value
600
400
9
0.6
1.2
0.3
0.6
o
Unit
V
V
V
A
A
A
A
W
o
o
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
amb
= 25 C
Storage Temperature
Max. Operating Junction Temperature
0.9
-65 to 150
150
C
C
September 2000
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STBV68
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-ambient
Max
140
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CEV
I
EBO
Parameter
Collector Cut-off
Current (V
BE
= -1.5 V)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= 600 V
V
BE
= 9 V
I
C
= 1 mA
L = 25mH
400
Min.
Typ.
Max.
250
1
Unit
µA
mA
V
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
INDUCTIVE LOAD
Fall Time
I
C
= 0.1 A
I
C
= 0.15 A
I
C
= 0.25 A
I
C
= 0.1 A
I
C
= 0.15 A
I
C
= 0.1 A
I
C
= 0.25 A
I
C
= 0.1 A
I
B1
= - I
B2
= 20 mA
I
B
= 20 mA
I
B
= 50 mA
I
B
= 100 mA
I
B
= 20 mA
I
B
= 50 mA
V
CE
= 5 V
V
CE
= 10 V
V
clamp
= 300 V
L =3 mH
7
3
0.35
0.8
3.0
V
BE(sat)
∗
h
FE
∗
t
f
∗
Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
O
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b
-O
P
te
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r
0.3
s)
t(
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1.0
1.2
15
6
V
V
µs
0.75
1.5
5
V
V
V
2/4
STBV68
O
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
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