IGBT
TRENCHSTOP
TM
PerformancetechnologycopackedwithRAPID1
fastanti-paralleldiode
IKW30N60DTP
600VDuoPackIGBTanddiode
TRENCHSTOP
TM
Performanceseries
Datasheet
IndustrialPowerControl
IKW30N60DTP
TRENCHSTOP
TM
PerformanceSeries
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
TRENCHSTOP
TM
technologyoffering
•verylowV
CEsat
•lowturn-offlosses
•shorttailcurrent
•lowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•drives
•solarinverters
•uninterruptiblepowersupplies
•converterswithmediumswitchingfrequency
G
C
C
G
E
E
KeyPerformanceandPackageParameters
Type
IKW30N60DTP
V
CE
600V
I
C
30A
V
CEsat
,T
vj
=25°C
1.6V
T
vjmax
175°C
Marking
K30DDTP
Package
PG-TO247-3
2
Rev.2.1,2016-02-08
IKW30N60DTP
TRENCHSTOP
TM
PerformanceSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.2.1,2016-02-08
IKW30N60DTP
TRENCHSTOP
TM
PerformanceSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Collector-emittervoltage,T
vj
≥25°C
DCcollectorcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax1)
Turn off safe operating area
V
CE
≤600V,T
vj
≤175°C,t
p
=1µs
1)
Diodeforwardcurrent,limitedbyT
vjmax
T
C
=25°C
T
C
=100°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax1)
Gate-emitter voltage
Short circuit withstand time
V
GE
=15.0V,V
CC
≤400V
Allowed number of short circuits < 1000
Time between short circuits:
≥
1.0s
T
vj
=150°C
PowerdissipationT
C
=25°C
PowerdissipationT
C
=100°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
ThermalResistance
Parameter
R
th
Characteristics
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
R
th(j-c)
R
th(j-c)
Symbol Conditions
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
Value
600
53.0
38.0
90.0
90.0
39.0
24.0
90.0
±20
Unit
V
A
A
A
A
A
V
t
SC
5
P
tot
T
vj
T
stg
200.0
100.0
-40...+175
-55...+150
260
M
0.6
µs
W
°C
°C
°C
Nm
Value
min.
typ.
max.
Unit
-
-
0.50
0.99
0.75
1.55
K/W
K/W
1)
Defined by design. Not subject to production test.
4
Rev.2.1,2016-02-08
IKW30N60DTP
TRENCHSTOP
TM
PerformanceSeries
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,I
C
=2.00mA
Collector-emitter saturation voltage
V
CEsat
V
GE
=15.0V,I
C
=30.0A
T
vj
=25°C
T
vj
=175°C
V
GE
=0V,I
F
=15.0A
T
vj
=25°C
T
vj
=175°C
I
C
=0.48mA,V
CE
=V
GE
V
CE
=600V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
V
CE
=0V,V
GE
=20V
V
CE
=20V,I
C
=30.0A
600
-
-
-
-
4.1
-
-
-
-
-
1.60
1.94
1.45
1.39
5.1
-
-
-
26.0
-
1.80
-
1.70
-
5.7
40
-
100
-
V
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
F
V
GE(th)
I
CES
I
GES
g
fs
V
V
µA
nA
S
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
C
ies
C
oes
C
res
Q
G
L
E
V
GE
=15.0V,V
CC
≤400V,
t
SC
≤5µs
T
vj
=150°C
V
CC
=480V,I
C
=30.0A,
V
GE
=15V
V
CE
=25V,V
GE
=0V,f=1MHz
-
-
-
-
-
1050
58
36
130.0
13.0
-
-
-
-
-
nC
nH
pF
Symbol Conditions
Value
min.
typ.
max.
Unit
Short circuit collector current
Max. 1000 short circuits
I
C(SC)
Time between short circuits:
≥
1.0s
SwitchingCharacteristic,InductiveLoad
Parameter
IGBTCharacteristic,atT
vj
=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
137
-
A
Symbol Conditions
Value
min.
-
-
-
-
-
-
-
typ.
15
21
179
12
0.71
0.42
1.13
max.
-
-
-
-
-
-
-
Unit
T
vj
=25°C,
V
CC
=400V,I
C
=30.0A,
V
GE
=0.0/15.0V,
R
G(on)
=10.5Ω,R
G(off)
=10.5Ω,
Lσ=32nH,Cσ=60pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
ns
ns
ns
ns
mJ
mJ
mJ
5
Rev.2.1,2016-02-08
京公网安备 11010802033920号
EEWORLD
