PD -95437
IRF7526D1PbF
l
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Co-packaged HEXFET
®
Power
MOSFET and Schottky Diode
P-Channel HEXFET
Low V
F
Schottky Rectifier
Generation 5 Technology
Micro8
TM
Footprint
Lead-Free
FETKY
TM
MOSFET & Schottky Diode
A
A
S
G
1
8
K
K
D
D
2
7
V
DSS
= -30V
R
DS(on)
= 0.20Ω
Schottky Vf = 0.39V
3
6
4
5
Description
Top View
The
FETKY
TM
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8 package, with half the footprint area of the standard SO-8, provides
TM
the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal
device for applications where printed circuit board space is at a premium. The low
TM
profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
TM
Micro8
TM
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
Maximum
-2.0
-1.6
-16
1.25
0.8
10
± 20
-5.0
-55 to +150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Junction-to-Ambient
Ã
Maximum
100
Units
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
I
SD
≤
-1.2A, di/dt
≤
160A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300µs – duty cycle
≤
2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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1
02/22/05
IRF7526D1PbF
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Min.
-30
–––
–––
-1.0
0.94
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.17
0.30
–––
–––
–––
–––
–––
–––
7.5
1.3
2.5
9.7
12
19
9.3
180
87
42
Typ.
–––
–––
–––
30
37
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
0.20
V
GS
= -10V, I
D
= -1.2A
Ω
0.40
V
GS
= -4.5V, I
D
= -0.60A
–––
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -0.60A
-1.0
V
DS
= -24V, V
GS
= 0V
µA
-25
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
11
I
D
= -1.2A
1.9
nC V
DS
= -24V
3.7
V
GS
= -10V, See Fig. 6
–––
V
DD
= -15V
–––
I
D
= -1.2A
ns
–––
R
G
= 6.2Ω
–––
R
D
= 12Ω,
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0MHz, See Fig. 5
Max. Units
Conditions
-1.25
A
-9.6
-1.2
V
T
J
= 25°C, I
S
= -1.2A, V
GS
= 0V
45
ns
T
J
= 25°C, I
F
= -1.2A
55
nC di/dt = 100A/µs
Conditions
50% Duty Cycle. Rectangular Wave, T
A
= 25°C
See Fig. 14
T
A
= 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with V
RRM
applied
Conditions
I
F
= 1.0A, T
J
= 25°C
I
F
= 2.0A, T
J
= 25°C
I
F
= 1.0A, T
J
= 125°C
I
F
= 2.0A, T
J
= 125°C .
V
R
= 30V T
J
= 25°C
T
J
= 125°C
V
R
= 5Vdc ( 100kHz to 1 MHz) 25°C
Rated V
R
MOSFET Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
I
F(av)
I
SM
Max. Units
1.9
A
1.3
120
11
A
Schottky Diode Electrical Specifications
V
FM
Parameter
Max. Forward voltage drop
Max. Units
0.50
0.62
V
0.39
0.57
0.06
mA
16
92
pF
3600 V/µs
I
RM
C
t
dv/dt
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7526D1PbF
Power Mosfet Characteristics
10
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
10
-I D , Drain-to-Source Current (A)
1
-I D , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
1
-3.0V
-3.0V
20µs PULSE WIDTH
T
J
= 25°C
A
0.1
1
10
0.1
0.1
0.1
1
20µs PULSE WIDTH
T
J
= 150°C
A
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
2.0
-I
D
, Drain-to-Source Current (A)
T
J
= 25°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -1.2A
1.5
T
J
= 150°C
1
1.0
0.5
0.1
3.0
3.5
4.0
4.5
5.0
V
DS
= -10V
20µs PULSE WIDTH
5.5
6.0
6.5
7.0
A
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= -10V
100 120 140 160
A
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRF7526D1PbF
Power Mosfet Characteristics
400
20
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= -1.2A
V
DS
= -24V
V
DS
= -15V
16
C, Capacitance (pF)
300
C
iss
C
oss
200
12
8
C
rss
100
4
0
1
10
100
A
0
0
2
4
6
FOR TEST CIRCUIT
SEE FIGURE 9
8
10
12
A
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
D
, Drain Current (A)
10
T
J
= 150°C
1
100µs
T
J
= 25°C
1
1ms
0.1
0.4
0.6
0.8
1.0
V
GS
= 0V
1.2
A
0.1
1
T
A
= 25°C
T
J
= 150°C
Single Pulse
10
10ms
A
100
1.4
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7526D1PbF
Power Mosfet Characteristics
1000
Thermal Response (Z
thJC
)
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
10
100
P
DM
t
1
t
2
0.1
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 9.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
R
DS
(on) , Drain-to-Source On Resistance (Ω)
1.5
R
DS
(on) , Drain-to-Source On Resistance (Ω)
0.60
0.50
1.0
VGS = -4.5V
0.40
I
0.30
= -2.0A
0.5
0.20
VGS = -10V
0.0
0
1
2
3
4
A
0.10
3
6
9
12
15
A
-I
D
, Drain Current (A)
-V
GS
, Gate-to-Source Voltage (V)
Fig 10.
Typical On-Resistance Vs. Drain
Current
Fig 11.
Typical On-Resistance Vs. Gate
Voltage
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