Features
•
•
•
•
•
Supply Voltage: 4.5 V to 5.5 V
Automatic Sensitivity Adaptation (AGC)
Automatic Strong Signal Adaptation (ATC)
Carrier Frequency is 56 kHz; Adjusted by Zener Diode Fusing ±4%
TTL and CMOS Compatible
Applications
•
All Kinds of IR Remote Control Systems
•
Carrier Frequency Modulated Transmission Systems
IR Receiver
ASIC
ATA2516
Benefits
•
No External Components Needed
•
Enhanced Immunity Against Ambient Light Disturbances
Description
The IC ATA2516 is a complete IR receiver for data communication systems. The
device is developed and optimized for use in carrier frequency modulated transmis-
sion applications. Its function can be described using the block diagram in Figure 1 on
page 2. The input stage meets two main functions. First, it provides a suitable bias
voltage for the PIN diode. Secondly, the pulsed photo current signals are transformed
into a voltage by a special circuit which is optimized for low noise application. After
amplification by a Controlled Gain Amplifier (CGA), the signals pass a tuned inte-
grated narrow bandpass filter with a center frequency f
0
equivalent to the chosen
carrier frequency of the input signal. The demodulator is used to convert the input
burst signal to a digital envelope output pulse and to evaluate the signal information
quality, i.e., unwanted pulses will be suppressed at the output pin. All this is done by
means of an integrated dynamic feedback circuit which varies the gain as a function of
changing environmental conditions (ambient light, modulated lamps etc.). A 7-bit digi-
tal-to-analog converter is used to adjust the gain of the controlled gain amplifier. Other
special features serve to adapt to the current application to secure best transmission
quality. The ATA2516 operates in a voltage supply range of 4.5 V - 5.5 V.
Rev. 4801B–AUTO–10/04
ATA2516
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Supply voltage
Supply current (DC current I
IN_DC
= 0)
Input voltage
Input DC current at V
S
= 5 V
Output voltage
Operating temperature
Storage temperature
Power dissipation at T
amb
= 25°C
Symbol
V
S
I
S
V
IN
I
IN_DC
V
O
T
amb
T
stg
P
tot
Value
-0.3 to 6
0.5
-0.3 to V
S
0.8
-0.3 to V
S
-40 to +85
-40 to +125
10
Unit
V
mA
V
mA
V
°C
°C
mW
Thermal Resistance
Parameters
Junction ambient TSSOP8
Symbol
R
thJA
Value
TBD
Unit
K/W
Electrical Characteristics
T
amb
= 25°C, V
S
= 5 V unless otherwise specified.
No.
1
1.1
1.2
Parameters
Supply
Supply-voltage range
Supply current
I
IN_DC
= 0; see
Figure 6 on page 7
I
IN_DC
= 0; see
Figure 6 on page 7
T
amb
= -40°C to 85°C
T
amb
= 25°C; see
Figure 3 on page 5
R
Load
= 2.4 kΩ
1
1
V
S
I
S
I
S
4.5
5
0.29
5.5
0.34
V
mA
C
A
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1.3
2
2.1
2.2
2.3
3
3.1
3.2
3.3
Supply current
Output
Internal pull-up resistor
Output voltage low
Output voltage high
Input
Maximum input DC current
Maximum input DC current
Number of pulses required
1
0.4
mA
B
1, 3
3, 6
3, 1
R
PU
V
OL
V
OH
65
100
100
135
250
V
S
kΩ
mV
V
A
A
A
V
S
-
0.25
V
IN
= 0; see
Figure 8 on page 7
V
IN
= 0; T
amb
= 85°C
5
5
5
I
IN_DCMAX
I
IN_DCMAX
580
490
6
760
650
µA
µA
A
C
A
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note:
BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pins 19 to 21, pulses may appear at the OUT pin.
3
4801B–AUTO–10/04
Electrical Characteristics (Continued)
T
amb
= 25°C, V
S
= 5 V unless otherwise specified.
No.
Parameters
Test Conditions
Test signal: see
Figure 4 on page 6
V
S
= 5 V, T
amb
= 25°C,
I
IN_DC
= 0 µA; square pp,
burst N = 6, f = f
0
;
t
PER
= 5 ms, Figure 7;
BER = 80%
Test signal: see
Figure 4 on page 6
V
S
= 5 V, T
amb
= 25°C,
I
IN_DC
= 650 µA; square pp,
burst N = 6, f = f
0
;
t
PER
= 5 ms, Figure 7;
BER = 80%
V
IN
= 0
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
3.4
Minimum detection
threshold current
5
I
Eemin
2.5
4
6.4
nA
A
3.5
Minimum detection
threshold current
5
I
Eemin
20
30
60
nA
A
3.6
4
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
Photodiode input
capacitance
Center frequency of
bandpass
Center frequency zapping
accuracy of bandpass
Overall accuracy center
frequency of bandpass
BPF bandwidth
Quiescent value of gain
control counter
Single gain step
Switch-on delay
Pulse width
5, 6
70
pF
D
Controlled Amplifier and Filter
3
f
0
= 56 kHz
T
amb
= -40°C to 85°C
-3 dB; f
0
= 56 kHz;
see Figure 9 on page 8
V
IN
= 0; I
IN DC
= 0
3
3
3
f
0
f
0ZAPP
f
0tol
B
-4
-10
4
56
f
0
f
0
8
20
0.35
V
S
= 5 V, T
amb
= 25°C,
I
IN
= 20 nA pp, N = 6
V
S
= 5 V, T
amb
= 25°C,
I
IN
= 20 nA pp, N = 6
3
3
t
don
t
po
4
4
6
8
8
11
dB/c
Per
Per
A
A
+4
+7
14
kHz
%
%
kHz
A
A
C
C
A
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note:
BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pins 19 to 21, pulses may appear at the OUT pin.
ESD
Latch-up
Reliability
Burn-in
All pins: 1500 V HBM; 100 MM, MIL-STD-883C, Method 3015.7
According JEDEC78 Class2 (HT)
HTOL (1000 h) at T
j
= 150°C in molded TSSOP8 plastic package (2 lots)
With 800 samples from 2 lots
4
ATA2516
4801B–AUTO–10/04
京公网安备 11010802033920号
EEWORLD
