FDD3672
March 2010
FDD3672
N-Channel UltraFET
®
Trench MOSFET
100V, 44A, 28mΩ
Features
• r
DS(ON)
= 24mΩ (Typ.), V
GS
= 10V, I
D
= 44A
• Q
g
(tot) = 24nC (Typ.), V
GS
= 10V
• Low Miller Charge
• Low Qrr Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82760
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
DRAIN
(FLANGE)
GATE
SOURCE
D
G
TO-252AA
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Continuous (T
amb
=
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above
25
o
C
Operating and Storage Temperature
25
o
C,
V
GS
= 10V, R
θJA
=
52
o
C/W)
44
31
6.5
Figure 4
120
135
0.9
-55 to 175
A
A
A
A
mJ
W
W/
o
C
o
Parameter
Ratings
100
±20
Units
V
V
C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
2
1.11
100
52
o
o
o
C/W
C/W
C/W
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2010 Fairchild Semiconductor Corporation
FDD3672 Rev. A2
FDD3672
Package Marking and Ordering Information
Device Marking
FDD3672
Device
FDD3672
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 80V
V
GS
= 0V
V
GS
=
±20V
T
C
= 150 C
o
100
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(TH)
r
DS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250µA
I
D
= 44A, V
GS
= 10V
I
D
= 21A, V
GS
= 6V,
I
D
=44A, V
GS
=10V, T
C
=175
o
C
2
-
-
-
-
0.024
0.031
0.054
4
0.028
0.047
0.068
Ω
V
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 50V
I
D
= 44A
I
g
= 1.0mA
-
-
-
-
-
-
-
-
1710
247
62
24
3
8.6
5.6
5.6
-
-
-
36
4.5
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Resistive Switching Characteristics
(V
GS
= 10V)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 50V, I
D
= 44A
V
GS
= 10V, R
GS
= 11.0Ω
-
-
-
-
-
-
-
11
59
26
44
-
104
-
-
-
-
104
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 44A
I
SD
= 21A
I
SD
= 44A, dI
SD
/dt =100A/µs
I
SD
= 44A, dI
SD
/dt =100A/µs
-
-
-
-
-
-
-
-
1.25
1.0
52
80
V
V
ns
nC
Notes:
1:
Starting T
J
= 25°C, L = 0.6mH, I
AS
= 20A.
2:
Pulse Width = 100s
©2010 Fairchild Semiconductor Corporation
FDD3672 Rev. A2
FDD3672
Typical Characteristics
T
C
= 25°C unless otherwise noted
1.2
50
V
GS
= 10V
POWER DISSIPATION MULTIPLIER
1.0
40
0.8
I
D
, DRAIN CURRENT (A)
0
25
50
75
100
125
150
175
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
175
T
C
, CASE TEMPERATURE (
o
C)
2
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
0.01
10
-5
10
-4
30
0.6
20
0.4
0.2
10
0
0
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
Figure 3. Normalized Maximum Transient Thermal Impedance
500
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
DM
, PEAK CURRENT (A)
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I = I
25
175 - T
C
150
100
30
10
-5
10
-4
10
-3
10
-2
t , PULSE WIDTH (s)
10
-1
10
0
10
1
Figure 4. Peak Current Capability
©2010 Fairchild Semiconductor Corporation
FDD3672 Rev. A2
FDD3672
Typical Characteristics
T
C
= 25°C unless otherwise noted
300
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
I
D
, DRAIN CURRENT (A)
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
AS
, AVALANCHE CURRENT (A)
100
60
STARTING T
J
= 25
o
C
10
STARTING T
J
= 150
o
C
T
J
= 175
o
C
40
T
J
= 25
o
C
20
T
J
= -55
o
C
1
0.001
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
0
3.5
4.0
4.5
5.0
5.5
6.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
6.5
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
80
V
GS
= 10V
V
GS
= 7V
V
GS
= 6V
DRAIN TO SOURCE ON RESISTANCE (m
Ω)
T
C
= 25
o
C
60
40
Figure 6. Transfer Characteristics
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
35
V
GS
= 6V
30
I
D
, DRAIN CURRENT (A)
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20
V
GS
= 5V
0
0
0.5
1.0
1.5
2.0
2.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3.0
25
V
GS
= 10V
20
15
0
10
20
30
I
D
, DRAIN CURRENT (A)
40
50
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Drain
Current
1.2
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
NORMALIZED GATE
THRESHOLD VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
1.0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
1.5
0.8
1.0
V
GS
= 10V, I
D
= 44A
0.5
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
0.6
0.4
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
©2010 Fairchild Semiconductor Corporation
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
FDD3672 Rev. A2
FDD3672
Typical Characteristics
T
C
= 25°C unless otherwise noted
1.2
I
D
= 250µA
3000
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1000
1.1
C, CAPACITANCE (pF)
C
OSS
≅
C
DS
+ C
GD
C
ISS
=
C
GS
+ C
GD
C
RSS
=
C
GD
100
1.0
V
GS
= 0V, f = 1MHz
0.9
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
200
10
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V
DD
= 50V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 12. Capacitance vs Drain to Source
Voltage
200
100
I
D
, DRAIN CURRENT (A)
8
100 us
6
10
THIS AREA IS
LIMITED BY r
DS(on)
4
1
SINGLE PULSE
T
J
= MAX RATED
R
JC
= 1.11
o
o
1 ms
2
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 44A
I
D
= 21A
0
5
10
15
20
25
C/W
10 ms
DC
T
C
= 25 C
0
Q
g
, GATE CHARGE (nC)
0.1
1
10
100
300
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 13. Gate Charge Waveforms
for
Constant Gate Currents
Figure 14. Forward Bias Safe
Operating Area
©2010 Fairchild Semiconductor Corporation
FDD3672 Rev. A2
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