2N4013 datasheet, PDF - EEWORLD Datasheet

2N4013: DescriptionBipolar Transistors - BJT NPN Hi-Curr SW; CategoryDiscrete semiconductor The transistor; File Size326KB，10 Pages; ManufacturerCentral Semiconductor

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Bipolar Transistors - BJT NPN Hi-Curr SW

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Maximum off time (toff)	60 ns
Maximum opening time (tons)	35 ns
Base Number Matches	1

	2N4013	2N3963
Description	Bipolar Transistors - BJT NPN Hi-Curr SW	Bipolar Transistors - BJT SMALL SIGNAL TRANS PNP 80V 1A
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	1 A	0.2 A
Collector-emitter maximum voltage	30 V	80 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	60	100
JEDEC-95 code	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	200 °C	175 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	PNP
Maximum power dissipation(Abs)	0.5 W	0.36 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	40 MHz
Base Number Matches	1	1

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