H
VE S C O
AV R M
AI SIO PL
LA N IA
BL S NT
E
TISP4A270H3BJ
ASYMMETRICAL-BIDIRECTIONAL THYRISTOR SPD
*R
o
TISP4A270H3BJ LCAS R
LINE
Protector
Optimized LCAS R
LINE
Protector
TISP4A270H3BJ V
(BO)
Derived from:
-Break Switch, SW1 & SW2, Ratings
-Ring Return Switch, SW3, Rating
-Ringing Access Switch, SW4, Rating
-Switch Isolation Ratings
-Battery Voltage Range of -40 V to -60 V
-Power Fault Conditions
-Lightning Impulse Conditions
-LCAS Characteristic Temperature Range
TISP4A270H3BJ Designed for:
-Battery-Backed Ringing Circuits
Voltage Swing ........................................... +148 V to -206 V
Allows ................. 103 V rms Ringing with -60 V Battery
Temperature Range .................................. -40
°C
to +85
°C
Device
V
DRM
V
‘4A270
+160
-222
V
(BO)
V
+217
-270
R
G
SMB Package (Top View)
G
1
2
R
MD4A270B
Device Symbol and Circuit Application
'7581 LCAS
TISP4165H3
TIP
T
LINE
SW3
Ring
return
switch
SW1
Break
switch
T
BAT
SCR, Diode
protection
Control
logic
T
RING ING
T
SD
F
GND
SW2
Break
switch
V
BAT
R
BAT
R
LINE
SW4
Ringing
access
switch
Rated for International Surge Wave Shapes
Wave Shape
2/10
10/700
10/1000
Standard
GR-1089-CORE
ITU-T K.20/45/21
GR-1089-CORE
I
PPSM
A
500
150
100
RING
TISP4A270H3
V
DD
LATCH
INPUT
D
GND
R
RINGING
AI4BITAMA
............................................ UL Recognized Components
Description
The TISP4A270H3BJ is an asymmetrical-bidirectional thyristor surge protective device (SPD). It is designed to limit the peak voltages on the
R
LINE
(Ring Line) terminal of ‘7581/2/3 LCAS (Line Card Access Switch) devices. The TISP4A270H3BJ must have the bar-indexed terminal 1 (G)
connected to the protective ground and terminal 2 (R) connected to the R
LINE
terminal.
The TISP4A270H3BJ voltages are chosen to give R
LINE
terminal protection for all LCAS switch conditions. The most potentially stressful
condition is low level power cross when the switches are closed. Under this condition, the TISP4A270H3BJ limits the voltage and
corresponding LCAS dissipation until the LCAS thermal trip operates and opens the switches.
Under open-circuit ringing conditions, the R
LINE
terminal will have high peak voltages. For battery backed ringing, the R
LINE
terminal will have a
larger peak negative voltage than positive, i.e. the peak voltages are asymmetric. The TISP4A270H3BJ has a similar voltage asymmetry which
will allow the maximum possible ringing voltage, while still giving protection. With a connected telephone line, the LCAS T
LINE
(Tip Line)
terminal voltage levels will be less than 50 % of the open-circuit R
LINE
terminal values. So the T
LINE
terminal can be protected by a symmetrical-
bidirectional overvoltage protector of the TISP4xxxH3BJ series.
How to Order
For Standard
Termination Finish
Order As
TISP4A270H3BJR
Device
TISP4A270H3BJ
Package
BJ (SMB/DO-214AA with J-Bend)
Carrier
R (Embossed Tape Reeled)
For Lead Free
Termination Finish
Order As
TISP4A270H3BJRS
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
APRIL 2002 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A270H3BJ LCAS R
LINE
Protector
Description (Continued)
These devices allow signal voltages up to the maximum off-state voltage value, V
DRM
, see Figure 1. Voltages above V
DRM
are clipped and will
not exceed the breakover voltage, V
(BO)
, level. If sufficient current flows due to the overvoltage, the device switches into a low-voltage on-state
condition, which diverts the current from the overvoltage though the device. When the diverted current falls below the holding current, I
H
, level
the devices switches off and restores normal system operation.
The TISP4A270H3BJ is guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. This high current
protection device is in a plastic SMB package (JEDEC DO-214AA) and supplied in embossed tape reel pack.
Absolute Maximum Ratings, TA = 25
°C
(Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage, (see Note 1)
Non-repetitive peak on-state pulse current (see Notes 2 and 3)
2/10 (GR-1089-CORE, 2/10 voltage wave shape)
5/310 (ITU-T K.44, 10/700
µs
voltage wave shape used in K.20/45/21)
10/1000 (GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
di
T
/dt
T
J
T
stg
I
TSM
55
60
2.2
400
-40 to +150
-65 to +150
A/µs
°C
°C
A
I
PPSM
500
150
100
A
T
A
= 25
°C
T
A
= -40
°C
Symbol
V
DRM
Value
+160/-222
148/-206
Unit
V
See Figure 7 for voltage values at intermediate temperatures.
Initially, the TISP4A270H3BJ must be in thermal equilibrium with T
J
= 25
°C.
The surge may be repeated after the TISP4A270H3BJ returns to its initial conditions.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 6 for the current ratings at other durations. Derate current values at -0.61 % /°C for ambient
temperatures above 25
°C.
Overload Ratings, TA = 25
°C
(Unless Otherwise Noted)
Rating
Maximum overload on-state current without open circuit, 50 Hz/60 Hz a.c. (see Note 5)
a
0.03 s
0.07 s
1.6 s
5.0 s
1000 s
NOTE
5:
I
T(OV)M
60
40
8
7
2.2
Peak overload on-state current during a.c. power cross tests of GR-1089-CORE and UL 1950/60950. These electrical stress
levels may damage the TISP4A270H3BJ silicon chip. After test, the pass criterion is either that the device is functional or, if it is
faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected as the device is a
permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed.
A rms
Symbol
Value
Unit
APRIL 2002 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A270H3BJ LCAS R
LINE
Protector
Electrical Characteristics, TA = 25
°C
(Unless Otherwise Noted)
Parameter
Repetitive peak off-
state current
Test Conditions
V
D
= +100 V and -200 V
dv/dt =
±250
V/ms,
R
SOURCE
= 300
Ω
T
A
= 25
°C
T
A
= 85
°C
Min
Typ
Max
±5
±10
+217
-270
+231
-288
±0.15
±0.15
±5
T
A
= 85
°C
V
D
= 100 V
V
D
= 50 V
V
D
= 10 V
V
D
= 5 V
V
D
= 2 V
V
D
= 1 V
C
off
Off-state capacitance
f = 1 MHz,
V
d
= 1 V rms
V
D
= 0
V
D
= -1 V
V
D
= -2 V
V
D
= -5 V
.
V
D
= -10 V
V
D
= -50 V
V
D
= -100 V
21
27
41
48
56
61
68
62
56
48
40
25
20
±10
23
29
46
53
62
67
74
68
62
52
45
28
22
pF
±0.6
±0.6
Unit
µA
V
V
A
A
kV/µs
µA
I
DRM
V
(BO)
Breakover voltage
V
(BO)
Ramp breakover
voltage
I
(BO)
I
H
dv/dt
I
D
Breakover current
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt
≤
±1
kV/µs, Linear voltage ramp, Maximum ramp value =
±500
V
dv/dt =
±20
A/µs, Linear current ramp, Maximum ramp value =
±10
A
dv/dt =
±250
V/ms,
R
SOURCE
= 300
Ω
I
T
=
±5
A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
=
±50
V
Thermal Characteristics
Parameter
Test Conditions
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
R
ΘJA
Junction to free air thermal resistance
T
A
= 25
°C,
(see Note 6)
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25
°C
50
Min
Typ
Max
113
°C/W
Unit
NOTE 6: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
APRIL 2002 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A270H3BJ LCAS R
LINE
Protector
Parameter Measurement Information
+i
I
PPSM
Quadrant I
Switching
Characteristic
I
TSM
V
(BO)
I
H
I
DRM
-v
V
DRM
I
DRM
I
H
V
D
I
D
I
D
V
D
V
DRM
+v
I
(BO)
I
(BO)
V
(BO)
I
TSM
Quadrant III
Switching
Characteristic
I
PPSM
-i
PMXXAEA
Figure 1. Voltage-Current Characteristic for R and G Terminal Pair
All Measurements are Referenced to the G Terminal
APRIL 2002 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A270H3BJ LCAS R
LINE
Protector
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
V
D
=
±50
V
10
|I
D
| - Off-State Current -
µA
TCHAG
1.10
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TC4HAF
Normalized Breakover Vo ltage
1.05
1
0·1
1.00
0·01
0·001
-25
0
25
50
75
100 125
T
J
- Junction Temperature -
°C
150
0.95
-25
0
25
50
75
100 125
T
J
- Junction T emperature -
°C
150
Figure 2.
Figure 3.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
200
150
100
70
I
T
- On-State Current - A
50
40
30
20
15
10
7
5
4
3
2
1.5
1
0.7
1
1.5
2
3
4 5
V
T
- On-State Voltage - V
7
10
TC4HACBA
2.0
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TC4HAD
T
A
= 25
°C
t
W
= 100
µs
1.5
Normalized Holding Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-25
0
25
50
75
100 125
T
J
- Junction T emperature -
°C
150
Figure 4.
APRIL 2002 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Figure 5.
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