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FR6G05

Description
Rectifiers 400V 6A Fast Recovery
CategoryDiscrete semiconductor    diode   
File Size816KB,4 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
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FR6G05 Overview

Rectifiers 400V 6A Fast Recovery

FR6G05 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerGeneSiC
package instructionO-MUPM-D1
Reach Compliance Codecompliant
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JEDEC-95 codeDO-203AA
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current135 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current16 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum repetitive peak reverse voltage400 V
Maximum reverse current25 µA
Maximum reverse recovery time0.5 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
FR6A05 thru FR6GR05
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 400 V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
DO-4 Package
V
RRM
= 50 V - 400 V
I
F
= 6 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive p
p
peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤ 100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
FR6A(R)05
50
35
50
16
135
-55 to 150
-55 to 150
FR6B(R)05
100
70
100
16
135
-55 to 150
-55 to 150
FR6D(R)05
200
140
200
16
135
-55 to 150
-55 to 150
FR6G(R)05
400
280
400
16
135
-55 to 150
-55 to 150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 6 A, T
j
= 25 °C
V
R
= 50 V, T
j
= 25 °C
V
R
= 50 V, T
j
= 150 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
FR6A(R)05
1.4
25
6
FR6B(R)05
1.4
25
6
FR6D(R)05
1.4
25
6
FR6G(R)05
1.4
25
6
Unit
V
μA
mA
Recovery Time
Maximum reverse recovery
time
T
RR
500
500
500
500
nS
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
2.5
2.5
2.5
2.5
°C/W
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1

FR6G05 Related Products

FR6G05
Description Rectifiers 400V 6A Fast Recovery
Is it lead-free? Lead free
Maker GeneSiC
package instruction O-MUPM-D1
Reach Compliance Code compliant
ECCN code EAR99
application FAST RECOVERY
Shell connection CATHODE
Configuration SINGLE
Diode component materials SILICON
Diode type RECTIFIER DIODE
Maximum forward voltage (VF) 1.4 V
JEDEC-95 code DO-203AA
JESD-30 code O-MUPM-D1
Maximum non-repetitive peak forward current 135 A
Number of components 1
Phase 1
Number of terminals 1
Maximum operating temperature 150 °C
Minimum operating temperature -55 °C
Maximum output current 16 A
Package body material METAL
Package shape ROUND
Package form POST/STUD MOUNT
Maximum repetitive peak reverse voltage 400 V
Maximum reverse current 25 µA
Maximum reverse recovery time 0.5 µs
surface mount NO
Terminal form SOLDER LUG
Terminal location UPPER
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