TPSMB6.8A thru TPSMB43A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design
passivated anisotropic rectifier technology
• T
J
= 185 °C capability suitable for high
reliability and automotive requirement
• Available in uni-directional polarity only
Available
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
SMB
(DO-214AA)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
PRIMARY CHARACTERISTICS
V
BR
V
WM
P
PPM
I
FSM
T
J
max.
Polarity
Package
6.8 V to 43 V
5.8 V to 36.8 V
600 W
75 A
185 °C
Uni-directional
SMB (DO-214AA)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity:
color band denotes cathode end
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
(1)(2)
Peak pulse current with a 10/1000 μs waveform (fig. 3)
(1)
Peak forward surge current 8.3 ms single half sine-wave
(2)(3)
Maximum instantaneous forward voltage at 50 A
(2)(3)
Operating junction and storage temperature range
SYMBOL
P
PPM
I
PPM
I
FSM
V
F
T
J
, T
STG
VALUE
600
See table next page
75
3.5
-65 to +185
UNIT
W
A
A
V
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal
(3)
Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
Revision: 11-Jul-17
Document Number: 88406
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TPSMB6.8A thru TPSMB43A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V
BR (1)
AT I
T
(V)
MIN.
TPSMB6.8A
TPSMB7.5A
TPSMB8.2A
TPSMB9.1A
TPSMB10A
TPSMB11A
TPSMB12A
TPSMB13A
TPSMB15A
TPSMB16A
TPSMB18A
TPSMB20A
TPSMB22A
TPSMB24A
TPSMB27A
TPSMB30A
TPSMB33A
TPSMB36A
TPSMB39A
TPSMB43A
KEP
KGP
KKP
KMP
KPP
KRP
KTP
KVP
KXP
KZP
LEP
LGP
LKP
LMP
LPP
LRP
LTP
LVP
LXP
LZP
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
MAX.
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
5.8
6.4
7.02
7.78
8.55
9.4
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
TEST
CURRENT
I
T
(mA)
STAND-OFF
VOLTAGE
V
WM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
R
(μA)
500
250
100
25
5
2
2
2
1
1
1
1
1
1
1
1
1
1
1
1
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
T
J
= 150 °C
I
D
(μA)
1000
500
200
50
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
MAXIMUM
PEAK
PULSE
SURGE
CURRENT
I
PPM (2)
(A)
57.1
53.1
49.6
44.8
41.4
38.5
35.9
33
28.3
26.7
23.8
21.7
19.6
18.1
16
14.5
13.1
12
11.1
10.1
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
DEVICE
TYPE
Notes
(1)
V
BR
measured after I
T
applied for 300 μs, I
T
= square wave pulse or equivalent
(2)
Surge current waveform per fig. 3 and derated per fig. 2
(3)
All terms and symbols are consistent with ANSI/IEEE C62.35
ORDERING INFORMATION
(Example)
PREFERRED P/N
TPSMB6.8AHE3_A/H
(1)
TPSMB6.8AHE3_A/I
(1)
TPSMB6.8AHM3_A/H
(1)
TPSMB6.8AHM3_A/I
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
0.096
0.096
0.096
0.096
PREFERRED PACKAGE CODE
H
I
H
I
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 11-Jul-17
Document Number: 88406
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TPSMB6.8A thru TPSMB43A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C, unless otherwise noted)
100
10 000
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25 °C
10
P
PPM
- Peak Pulse Power (kW)
Junction Capacitance (pF)
V
R
measured
at Zero Bias
1000
V
R
measured at
Stand-Off Voltage, V
WM
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
10
1
10
100
1.0
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
t
d
- Pulse Width (s)
V
BR
- Breakdown Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
75
50
25
0
0
50
100
150
200
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3 ms Single Half Sine-Wave
10
1
10
100
T
J
- Initial Temperature (°C)
Number of Cycles at 60 Hz
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Maximum Non-Repetitive/Peak Forward Surge Current
150
I
PPM
- Peak Pulse Current, % I
RSM
t
r
= 10 µs
Peak Value
I
PPM
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
100
Half Value - I
PP
I
PPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Fig. 3 - Pulse Waveform
Revision: 11-Jul-17
Document Number: 88406
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TPSMB6.8A thru TPSMB43A
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Vishay General Semiconductor
Mounting Pad Layout
0.086(2.20)
0.077(1.95)
0.155(3.94)
0.130(3.30)
0.085 (2.159)
MAX.
0.180(4.57)
0.160(4.06)
0.086 (2.18)
MIN.
0.012(0.305)
0.006(0.152)
0.096(2.44)
0.084(2.13)
0.060 (1.52)
MIN.
0.220 REF.
0.060(1.52)
0.030(0.76)
0.220(5.59)
0.205(5.21)
0.008(0.2)
0 (0)
Revision: 11-Jul-17
Document Number: 88406
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000