MOSFET 30V P-Channel Trench MOSFET
| Parameter Name | Attribute value |
| Product Attribute | Attribute Value |
| Manufacturer | NXP |
| Product Category | MOSFET |
| RoHS | Details |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | DFN1006-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | - 30 V |
| Id - Continuous Drain Current | - 1 A |
| Rds On - Drain-Source Resistance | 430 mOhms |
| Vgs th - Gate-Source Threshold Voltage | - 950 mV |
| Vgs - Gate-Source Voltage | 8 V |
| Qg - Gate Charge | 1.4 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| Pd - Power Dissipation | 6.25 W |
| Channel Mode | Enhancement |
| Packaging | Cut Tape |
| Packaging | MouseReel |
| Packaging | Reel |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 2.1 S |
| Fall Time | 5 ns |
| NumOfPackaging | 3 |
| Rise Time | 6 ns |
| Factory Pack Quantity | 10000 |
| Typical Turn-Off Delay Time | 22 ns |
| Typical Turn-On Delay Time | 3 ns |
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