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MA2SD30

Description
Schottky Barrier Diodes Silicon epitaxial planar type For super high speed switching
CategoryDiscrete semiconductor    diode   
File Size60KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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MA2SD30 Overview

Schottky Barrier Diodes Silicon epitaxial planar type For super high speed switching

MA2SD30 Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.44 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current1 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.001 µs
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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