PD54008-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
■
■
■
■
Excellent thermal stability
Common source configuration
P
OUT
= 8 W with 11.5dB gain @ 500 MHz/7.5 V
New RF plastic package
PowerSO-10RF
(formed lead)
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 7 V in common source mode at
frequencies of up to 1 GHz. The device boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
Device’s superior linearity performance makes it
an ideal solution for portable radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Gate
PowerSO-10RF
(straight lead)
Figure 1.
Pin connection
Source
Drain
Table 1.
Device summary
Order code
PD54008-E
PD54008S-E
PD54008TR-E
PD54008STR-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Packing
Tube
Tube
Tape and reel
Tape and reel
May 2011
Doc ID 12271 Rev 3
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www.st.com
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Contents
PD54008-E
Contents
1
Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
1.2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
2.3
Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
4
Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1
4.2
PD54008-E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
PD54008S-E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
6
7
8
9
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
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Electrical characteristics
PD54008-E
2
Electrical characteristics
T
CASE
= +25
o
C
2.1
Static
Table 4.
Symbol
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
FS
C
ISS
C
OSS
C
RSS
V
GS
= 0
V
GS
= 20 V
V
DS
= 10 V
V
GS
= 10 V
V
DS
= 10 V
V
GS
= 0
V
GS
= 0
V
GS
= 0
Static
Test conditions
V
DS
= 25 V
V
DS
= 0
I
D
= 150 mA
I
D
= 2 A
I
D
= 2 A
V
DS
= 7.5 V
V
DS
= 7.5 V
V
DS
= 7.5 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
2.0
2.5
91
68
8.5
2.0
Min.
Typ.
Max.
1
1
5.0
0.6
Unit
µA
µA
V
V
mho
pF
pF
pF
2.2
Dynamic
Table 5.
Symbol
P
1dB
G
P
h
D
Dynamic
Test conditions
V
DD
= 7.5 V, I
DQ
= 150 mA
f = 500 MHz
Min.
8
10
50
20:1
11.5
55
Typ.
Max.
Unit
W
dB
%
VSWR
V
DD
= 7.5 V, I
DQ
= 150 mA, P
OUT
= 8 W, f = 500 MHz
V
DD
= 7.5 V, I
DQ
= 150 mA, P
OUT
= 8 W, f = 500 MHz
Load
V
DD
= 9.5 V, I
DQ
= 150 mA, P
OUT
= 8 W, f = 500 MHz
mismatch All phase angles
2.3
Moisture sensitivity level
Table 6.
Moisture sensitivity level
Test methodology
J-STD-020B
Rating
MSL 3
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