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PD54008S

Description
RF MOSFET Transistors N-Ch 25 Volt 5.0 Amp
CategoryDiscrete semiconductor    The transistor   
File Size482KB,29 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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PD54008S Overview

RF MOSFET Transistors N-Ch 25 Volt 5.0 Amp

PD54008S Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-F2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)5 A
Maximum drain current (ID)5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-F2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature165 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)73 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
PD54008-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
Excellent thermal stability
Common source configuration
P
OUT
= 8 W with 11.5dB gain @ 500 MHz/7.5 V
New RF plastic package
PowerSO-10RF
(formed lead)
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 7 V in common source mode at
frequencies of up to 1 GHz. The device boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
Device’s superior linearity performance makes it
an ideal solution for portable radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Gate
PowerSO-10RF
(straight lead)
Figure 1.
Pin connection
Source
Drain
Table 1.
Device summary
Order code
PD54008-E
PD54008S-E
PD54008TR-E
PD54008STR-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Packing
Tube
Tube
Tape and reel
Tape and reel
May 2011
Doc ID 12271 Rev 3
1/29
www.st.com
29
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