IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
ACTT10X-800CT
21 July 2014
TO
-2
20F
AC Thyristor Triac power switch
Product data sheet
1. General description
Planar passivated AC Thyristor Triac power switch in a SOT186A (TO-220F) "full pack"
plastic package with self-protective capabilities against low and high energy transients.
This triac will commutate the full RMS current at the maximum rated junction temperature
(T
j(max)
= 150 °C) without the aid of a snubber. It is used in applications where "high
junction operating temperature capability" is required.
2. Features and benefits
•
•
•
•
•
•
•
•
•
•
•
•
Clamping structure ensuring safe high over-voltage withstand capability
High junction operating temperature capability
Full cycle AC conduction
Isolated mounting base package
Less sensitive gate for high noise immunity
Over-voltage withstand capability to IEC 61000-4-5
Pin compatible with standard triacs
Planar passivated for voltage ruggedness and reliability
Safe clamping capability for low energy over-voltage transients
Self-protective turn-on during high energy voltage transients
Triggering in three quadrants only
Very high immunity to false turn-on by dV/dt
3. Applications
•
•
•
•
•
AC fan, pump and compressor controls
Highly inductive, resistive and safety loads
Large and small appliances (White Goods)
Reversing induction motor controls
Applications subject to high temperature
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
T
j
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
junction temperature
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
90
150
Unit
V
A
°C
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NXP Semiconductors
ACTT10X-800CT
AC Thyristor Triac power switch
Symbol
I
T(RMS)
V
PP
Parameter
RMS on-state current
peak pulse voltage
Conditions
full sine wave; T
h
≤ 88 °C;
Fig. 1; Fig. 2;
Fig. 3
T
j
= 25 °C; non-repetitive, off-state;
Fig. 6
Min
-
-
Typ
-
-
Max
10
2
Unit
A
kV
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 100 mA; LD+ G+;
T
j
= 25 °C;
Fig. 8
V
D
= 12 V; I
T
= 100 mA; LD+ G-;
T
j
= 25 °C;
Fig. 8
V
D
= 12 V; I
T
= 100 mA; LD- G-;
T
j
= 25 °C;
Fig. 8
V
CL
dV
D
/dt
clamping voltage
I
CL
= 0.1 mA; t
p
= 1 ms; T
j
= 25 °C
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
dI
com
/dt
rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 10 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
4
-
-
A/ms
850
-
-
V
-
-
35
mA
-
-
35
mA
-
-
35
mA
Dynamic characteristics
rate of rise of off-state
voltage
1000
-
-
V/µs
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
ACTT10X-800CT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
21 July 2014
2 / 14
NXP Semiconductors
ACTT10X-800CT
AC Thyristor Triac power switch
6. Ordering information
Table 3.
Ordering information
Package
Name
ACTT10X-800CT
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Type number
7. Marking
Table 4.
Marking codes
Marking code
ACTT10X-800CT
Type number
ACTT10X-800CT
ACTT10X-800CT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
21 July 2014
3 / 14
NXP Semiconductors
ACTT10X-800CT
AC Thyristor Triac power switch
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
h
≤ 88 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
V
PP
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
800
10
90
99
40
100
2
5
0.5
150
150
2
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
peak pulse voltage
2
t
p
= 10 ms; sine-wave pulse
I
T
= 15 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
t = 20 μs
A s
A/µs
A
W
W
°C
°C
kV
over any 20 ms period
-
-40
-
T
j
= 25 °C; non-repetitive, off-state;
Fig. 6
-
12
88 °C
I
T(RMS)
(A)
8
aaa-013645
30
I
T(RMS)
(A)
20
aaa-013647
4
10
0
-50
0
50
100
T
h
(°C)
150
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of heatsink
temperature; maximum values
f = 50 Hz; T
h
= 88 °C
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
ACTT10X-800CT
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
21 July 2014
4 / 14
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