PD55008-E datasheet, PDF - EEWORLD Datasheet

PD55008-E: DescriptionTrans RF FET N-CH 40V 4A 3-Pin PowerSO-10RF (Formed lead) Tube; CategoryDiscrete semiconductor The transistor; File Size456KB，25 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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Trans RF FET N-CH 40V 4A 3-Pin PowerSO-10RF (Formed lead) Tube

Parameter Name	Attribute value
Brand Name	STMicroelectronics
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	SOT
package instruction	ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
Contacts	10
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	25 weeks
Is Samacsys	N
Other features	HIGH RELIABILITY
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (Abs) (ID)	4 A
Maximum drain current (ID)	4 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G2
JESD-609 code	e3
Humidity sensitivity level	3
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	165 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	250
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	52.8 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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