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STK541UC60C-E

Description
Motor / Motion / Ignition Controllers & Drivers 3PHASE INVERTER HIC
Categorysemiconductor    Power management   
File Size297KB,12 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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STK541UC60C-E Overview

Motor / Motion / Ignition Controllers & Drivers 3PHASE INVERTER HIC

STK541UC60C-E Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryMotor / Motion / Ignition Controllers & Drivers
RoHSDetails
ProductFan / Motor Controllers / Drivers
TypeInverter
Operating Supply Voltage280 V
Output Current10 A
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 100 C
Mounting StyleThrough Hole
Package / CaseSIP23
PackagingTube
Operating Frequency20 kHz
Operating Temperature Range- 40 C to + 100 C
Output Voltage15 V
Load Voltage Rating600 V
NumOfPackaging1
Pd - Power Dissipation22 W
Factory Pack Quantity8
Unit Weight0.105822 oz
STK541UC60C-E
Intelligent Power Module (IPM)
600 V, 10 A
Overview
This “Inverter IPM” is highly integrated device containing all High
Voltage (HV) control from HV-DC to 3-phase outputs in a single SIP
module (Single-In line Package). Output stage uses IGBT / FRD
technology and implements Under Voltage Protection (UVP) and Over
Current Protection (OCP) with a Fault Detection output flag. Internal
Boost diodes are provided for high side gate boost drive.
Function
Single control power supply due to Internal bootstrap circuit for high
side pre-driver circuit
All control input and status output are at low voltage levels directly
compatible with microcontrollers
Built-in cross conduction prevention
Certification
UL Recognized (File Number : E339285)
Specifications
Absolute Maximum Ratings
at Tc = 25C
Parameter
Supply voltage
Collector-emitter voltage
Output current
Output peak current
Pre-driver voltage
Input signal voltage
FAULT terminal voltage
Maximum power dissipation
Junction temperature
Storage temperature
Operating substrate temperature
Tightening torque
Symbol
VCC
VCE
Io
Iop
VD1, 2, 3, 4
VIN
VFAULT
Pd
Tj
Tstg
Tc
IPM case temperature
Case mounting screws
*3
Conditions
P to N, surge < 500 V
P to U,V,W or U,V,W to N
P, N, U,V,W terminal current
P, N, U,V,W terminal current at Tc = 100C
P, N, U,V,W terminal current for a Pulse width of 1ms
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
HIN1, 2, 3, LIN1, 2, 3
FAULT terminal
IGBT per channel
IGBT,FRD
*2
*1
Ratings
450
600
±10
±5
±20
20
0.3
to 7
0.3
to VDD
22
150
40
to +125
40
to +100
0.9
Unit
V
V
A
A
A
V
V
V
W
C
C
C
Nm
VRMS
www.onsemi.com
Isolation Voltage
Vis
50 Hz sine wave AC 1 minute
*4
2000
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1 : Surge voltage developed by the switching operation due to the wiring inductance between “P” and “N” terminal.
*2 : VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS terminal voltage.
*3 : Flatness of the heat-sink should be less than 0.15 mm.
*4 : Test conditions : AC 2500 V, 1 second.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
December 2016 - Rev. 2
Publication Order Number :
STK541UC60C-E/D

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