EEWORLDEEWORLDEEWORLD

Part Number

Search

SUB85N03-04P-E3

Description
MOSFET 30V 85A 166W
CategoryDiscrete semiconductor    The transistor   
File Size71KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric Compare View All

SUB85N03-04P-E3 Online Shopping

Suppliers Part Number Price MOQ In stock  
SUB85N03-04P-E3 - - View Buy Now

SUB85N03-04P-E3 Overview

MOSFET 30V 85A 166W

SUB85N03-04P-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)85 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)166 W
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
SUP/SUB85N03-04P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
FEATURES
r
DS(on)
(W)
I
D
(A)
a
85
a
85
a
0.0043 @ V
GS
= 10 V
0.007 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
175_C Maximum Junction Temperature
D
TO-263 (D
2
PAK) 100% R
g
Tested
D
TO-220AB
TO-263
(D
2
PAK)
G
DRAIN connected to TAB
G
G D S
Top View
SUP85N03-04P
D S
Top View
SUB85N03-04P
S
N-Channel MOSFET
Ordering Information: SUP85N03-04P (TO-220AB)
SUB85N03-04P (TO-263, D
2
PAK)
SUB85N03-04P—E3 (TO-263, D
2
PAK, Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipation
b
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
d
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
30
"20
85
a
85
a
240
75
280
166
c
3.75
−55
to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
J
ti t A bi t
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
www.vishay.com
Free Air (TO-220AB)
R
thJA
R
thJC
Symbol
Limit
40
62.5
0.9
Unit
_C/W
C/W
1

SUB85N03-04P-E3 Related Products

SUB85N03-04P-E3 SUP85N03-04P-E3
Description MOSFET 30V 85A 166W MOSFET 30V 85A 166W
Is it Rohs certified? conform to conform to
Maker Vishay Vishay
Reach Compliance Code unknown unknown
Configuration Single Single
Maximum drain current (Abs) (ID) 85 A 85 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 166 W 166 W
surface mount YES NO
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier
Design of application model using Bluetooth technology in fieldbus
Traditional fieldbus networks generally use wired media as transmission media. Wired transmission media make the location of communication equipment relatively fixed. Some special industrial field env...
ohahaha RF/Wirelessly
Shenzhen Yezhan Electronics is looking for talents||Looking forward to your joining
Recruitment position: Technical support engineer Demand department: Technology Development Department ( 2 people)6K~10K yuan / month Job Responsibilities:Participate in or lead new product development...
yezhan2019 Recruitment
【Atria AT32WB415 Series Bluetooth BLE 5.0 MCU】Serial port test
The AT32WB415 series products have three built-in universal synchronous/asynchronous receivers and transmitters (USART1, USART2, and USART3), and one universal asynchronous receiver and transmitter (U...
常见泽1 RF/Wirelessly
The development board mobile station helps netizens successfully participate in the electronic competition!
The e-sports competition is about to begin. In order to allow netizens to get a development board in the shortest possible time and practice in actual combat, the mobile station has specially selected...
高进 Electronics Design Contest
TechTest Elite Development Program - Answer questions and win gifts!
TechTest Elite Development Program - Answer questions to win gifts! It's time to start~Click here to enter the eventEvent time: From now until September 15, 2020 Activity process: 1. Click the " I wan...
EEWORLD社区 Integrated technical exchanges
Big summary! All sensor types are here
Hello everyone, I am Xiaoyi. The Internet of Things is developing rapidly, and sensors are indispensable for various IoT products to realize different functions. What sensors have you used? Let’s firs...
成都亿佰特 Sensor

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号