HMC326MS8GE datasheet, PDF - EEWORLD Datasheet

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HMC326MS8GE: DescriptionBasic information of HMC326MS8GE amplifier: Commonly used packaging methods are ROHS COMPLIANT, ULTRA SMALL, PLASTIC, SMT, MSOP-8 HMC326MS8GE amplifier core information: The minimum operating temperature of HMC326MS8GE is -40 °C and the maximum operating temperature is 85 °C. The amplifier gain of HMC326MS8GE can reach: 18 dB (Amplifier gain is the logarithm of the ratio of amplifier output power to input power, which is used to express the degree of power amplification. It also refers to the amplification factor of voltage or current. Similarly, decibel is the unit of amplifier gain. ) Its maximum operating frequency is: 4500 MHz, and the minimum operating frequency is: 3000 MHz. The corresponding maximum input power is 15 dBm. When a single-ended signal is added to the transmission line, the single-ended impedance felt by the signal on HMC326MS8GE is 50 Ω. (That is, the characteristic impedance of HMC326MS8GE is 50 Ω) The range of its power supply is: 5 V. Related dimensions of HMC326MS8GE: HMC326MS8GE has 8 terminals. HMC326MS8GE amplifier additional information: HMC326MS8GE is not Rohs certified. It does not contain lead. The corresponding JESD-609 code is: e3. The packaging materials of HMC326MS8GE are mostly PLASTIC/EPOXY.; CategoryWireless rf/communication Radio frequency and microwave; File Size345KB，6 Pages; ManufacturerHittite Microwave（ADI）; Websitehttp://www.hittite.com/; Environmental Compliance; Alternative parts：HMC326MS8GE

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HMC326MS8GE Overview

Basic information of HMC326MS8GE amplifier:

Commonly used packaging methods are ROHS COMPLIANT, ULTRA SMALL, PLASTIC, SMT, MSOP-8

HMC326MS8GE amplifier core information:

The minimum operating temperature of HMC326MS8GE is -40 °C and the maximum operating temperature is 85 °C.

The amplifier gain of HMC326MS8GE can reach: 18 dB (Amplifier gain is the logarithm of the ratio of amplifier output power to input power, which is used to express the degree of power amplification. It also refers to the amplification factor of voltage or current. Similarly, decibel is the unit of amplifier gain. ) Its maximum operating frequency is: 4500 MHz, and the minimum operating frequency is: 3000 MHz. The corresponding maximum input power is 15 dBm. When a single-ended signal is added to the transmission line, the single-ended impedance felt by the signal on HMC326MS8GE is 50 Ω. (That is, the characteristic impedance of HMC326MS8GE is 50 Ω)

The range of its power supply is: 5 V.

Related dimensions of HMC326MS8GE:

HMC326MS8GE has 8 terminals.

HMC326MS8GE amplifier additional information:

HMC326MS8GE is not Rohs certified. It does not contain lead. The corresponding JESD-609 code is: e3. The packaging materials of HMC326MS8GE are mostly PLASTIC/EPOXY.

HMC326MS8GE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Hittite Microwave（ADI）
package instruction	ROHS COMPLIANT, ULTRA SMALL, PLASTIC, SMT, MSOP-8
Reach Compliance Code	unknown
ECCN code	EAR99
Characteristic impedance	50 Ω
structure	COMPONENT
Gain	18 dB
Maximum input power (CW)	15 dBm
JESD-609 code	e3
Installation features	SURFACE MOUNT
Number of functions	1
Number of terminals	8
Maximum operating frequency	4500 MHz
Minimum operating frequency	3000 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Encapsulate equivalent code	TSSOP8,.19
power supply	5 V
RF/Microwave Device Types	WIDE BAND MEDIUM POWER
surface mount	YES
technology	GAAS
Terminal surface	Matte Tin (Sn)
Base Number Matches	1

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HMC326MS8G / 326MS8GE

v09.0511

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 3.0 - 4.5 GHz

Typical Applications

The HMC326MS8G / HMC326MS8GE is ideal for:

Features

Psat Output Power: +26 dBm

> 40% PAE

Output IP3: +36 dBm

High Gain: 21 dB

Vs: +5V

Ultra Small Package: MSOP8G

AMPLIFIERS - DRIVER & GAIN BLOCK - SMT

• Microwave Radios

• Broadband Radio Systems

• Wireless Local Loop Driver Amplifier

Functional Diagram

General Description

The HMC326MS8G & HMC326MS8GE are high

efficiency GaAs InGaP Heterojunction Bipolar

Transistor (HBT) MMIC driver amplifiers which

operate between 3.0 and 4.5 GHz. The amplifier

is packaged in a low cost, surface mount 8 leaded

package with an exposed base for improved RF and

thermal performance. The amplifier provides 21 dB

of gain and +26 dBm of saturated power from a +5V

supply voltage. Power down capability is available to

conserve current consumption when the amplifier is

not in use. Internal circuit matching was optimized to

provide greater than 40% PAE.

Electrical Specifications,

= +25° C, Vs = 5V, Vpd = 5V

Parameter

Frequency Range

Gain

Gain Variation Over Temperature

Input Return Loss

Output Return Loss

Output Power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

Supply Current (Icc)

Control Current (Ipd)

Switching Speed

tOn/tOff

Vpd = 0V

Vpd = 5V

110

Min.

Typ.

3.0 - 4.5

0.025

23.5

130

160

0.035

Max.

Units

GHz

dB /

°C

dBm

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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