IXFH58N20Q datasheet, PDF - EEWORLD Datasheet

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IXFH58N20Q: Description58 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247; Categorysemiconductor Discrete semiconductor; File Size355KB，2 Pages; ManufacturerIXYS ( Littelfuse ); Websitehttp://www.ixys.com/

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IXFH58N20Q Overview

58 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

IXFH58N20Q Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	200 V
Processing package description	TO-247, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	TIN SILVER COPPER
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	58 A
Rated avalanche energy	1000 mJ
Maximum drain on-resistance	0.0400 ohm
Maximum leakage current pulse	232 A

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HiPerFET

Power MOSFETs

Q-Class

N-Channel Enhancement Mode

Avalanche Rated High dv/dt, Low Q

Preliminary data sheet

Symbol

DSS

DGR

GSM

D25

dv/dt

stg

Weight

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

TO-247

TO-268

Test Conditions

= 25°C to 150°C

= 25°C to 150°C; R

= 1 MΩ

Continuous

Transient

= 25°C

= 25°C, pulse width limited by T

= 25°C

≤

, di/dt

≤

100 A/µs, V

≤

DSS

≤

150°C, R

= 2

Ω

= 25°C

IXFH 58N20Q

IXFT 58N20Q

DSS

D25

DS(on)

= 200 V

58 A

40 mW

200 ns

Maximum Ratings

200

±20

±30

232

1.0

300

-55 ... +150

150

-55 ... +150

300

V/ns

°C

TO-268 (D3) (IXFT) Case Style

(TAB)

TO-247 AD

(TAB)

G = Gate

S = Source

D = Drain

TAB = Drain

Features

1.13/10 Nm/lb.in.

Symbol

Test Conditions

= 25°C, unless otherwise specified)

DSS

GS(th)

GSS

DSS

DS(on)

= 0 V, I

= 250

µA

= V

, I

= 4 mA

±20

, V

= 0

= V

DSS

= 0 V

= 25°C

= 125°C

Characteristic Values

Min. Typ.

Max.

200

2.0

4.0

±100

µA

Ω

IXYS advanced low Q

process

International standard packages

Low gate charge and capacitance

- easier to drive

- faster switching

Low R

DS (on)

Unclamped Inductive Switching (UIS)

rated

Molding epoxies meet UL 94 V-0

flammability classification

Advantages

= 10 V, I

= 0.5 I

D25

Pulse test, t

≤

300

µs,

duty cycle d

≤

2 %

Easy to mount

Space savings

High power density

98523A (5/99)

IXFH58N20Q Related Products

	IXFH58N20Q	IXFT58N20Q	IXFT58N20Q TRL
Description	58 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247	58 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247	MOSFET N-CH 200V 58A TO268
Number of terminals	3	3	-
Minimum breakdown voltage	200 V	200 V	-
Processing package description	TO-247, 3 PIN	TO-247, 3 PIN	-
Lead-free	Yes	Yes	-
EU RoHS regulations	Yes	Yes	-
state	ACTIVE	ACTIVE	-
packaging shape	RECTANGULAR	RECTANGULAR	-
Package Size	FLANGE MOUNT	FLANGE MOUNT	-
Terminal form	THROUGH-HOLE	THROUGH-HOLE	-
terminal coating	TIN SILVER COPPER	TIN SILVER COPPER	-
Terminal location	SINGLE	SINGLE	-
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	-
structure	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Shell connection	DRAIN	DRAIN	-
Number of components	1	1	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-
Channel type	N-CHANNEL	N-CHANNEL	-
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
operating mode	ENHANCEMENT	ENHANCEMENT	-
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	-
Maximum leakage current	58 A	58 A	-
Rated avalanche energy	1000 mJ	1000 mJ	-
Maximum drain on-resistance	0.0400 ohm	0.0400 ohm	-
Maximum leakage current pulse	232 A	232 A	-

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