IS64LV25616AL-12TLA2 datasheet, PDF

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IS64LV25616AL-12TLA2: Description256K X 16 STANDARD SRAM, 12 ns, PDSO44; Categorystorage; File Size123KB，14 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/

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IS64LV25616AL-12TLA2 Overview

256K X 16 STANDARD SRAM, 12 ns, PDSO44

IS64LV25616AL-12TLA2 Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	44
Maximum operating temperature	125 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	3.63 V
Minimum supply/operating voltage	3.14 V
Rated supply voltage	3.3 V
maximum access time	12 ns
Processing package description	Lead FREE, Plastic, TSOP2-44
Lead-free	Yes
EU RoHS regulations	Yes
state	DISCONTINUED
Craftsmanship	CMOS
packaging shape	Rectangle
Package Size	SMALL OUTLINE, THIN PROFILE
surface mount	Yes
Terminal form	GULL WING
Terminal spacing	0.8000 mm
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Temperature level	AUTOMOTIVE
memory width	16
organize	256K × 16
storage density	4.19E6 deg
operating mode	ASYNCHRONOUS
Number of digits	262144 words
Number of digits	256K
Memory IC type	Standard memory
serial parallel	parallel

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IS64LV25616AL

256K x 16 HIGH SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH 3.3V SUPPLY

FEATURES

• High-speed access time: 10, 12 ns

• CMOS low power operation

• Low stand-by power:

Less than 5 m

(typ.) CMOS stand-by

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh

required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Temperature Offerings:

Option A1: –40

C to +85

Option A2: –40

C to +105

Option A3: –40

C to +125

• Lead-free available

ISSI

JULY 2006

DESCRIPTION

The

ISSI

IS64LV25616AL is a high-speed, 4,194,304-bit

static RAM organized as 262,144 words by 16 bits. It is

fabricated using

ISSI

's high-performance CMOS technol-

ogy. This highly reliable process coupled with innovative

circuit design techniques, yields high-performance and low

power consumption devices.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs,

and

OE.

The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

The IS64LV25616AL is packaged in the JEDEC standard

44-pin TSOP Type II and 48-pin Mini BGA (8mm x 10mm).

FUNCTIONAL BLOCK DIAGRAM

A0-A17

DECODER

256K x 16

MEMORY ARRAY

GND

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

I/O

DATA

CIRCUIT

COLUMN I/O

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. D

07/05/06

IS64LV25616AL-12TLA2 Related Products

	IS64LV25616AL-12TLA2	IS64LV25616AL-10TA1	IS64LV25616AL-12TA2	IS64LV25616AL	IS64LV25616AL-12BA2
Description	256K X 16 STANDARD SRAM, 12 ns, PDSO44	256K X 16 STANDARD SRAM, 12 ns, PDSO44	256K X 16 STANDARD SRAM, 12 ns, PDSO44	256K X 16 STANDARD SRAM, 12 ns, PDSO44	256K X 16 STANDARD SRAM, 12 ns, PDSO44
Number of functions	1	1	1	1	1
Number of terminals	44	44	44	44	44
Maximum operating temperature	125 Cel	125 Cel	125 Cel	125 Cel	125 Cel
Minimum operating temperature	-40 Cel	-40 Cel	-40 Cel	-40 Cel	-40 Cel
Maximum supply/operating voltage	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V
Minimum supply/operating voltage	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V
Rated supply voltage	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
maximum access time	12 ns	12 ns	12 ns	12 ns	12 ns
Processing package description	Lead FREE, Plastic, TSOP2-44	Lead FREE, Plastic, TSOP2-44	Lead FREE, Plastic, TSOP2-44	Lead FREE, Plastic, TSOP2-44	Lead FREE, Plastic, TSOP2-44
Lead-free	Yes	Yes	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes	Yes	Yes
state	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED
Craftsmanship	CMOS	CMOS	CMOS	CMOS	CMOS
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
surface mount	Yes	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal spacing	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm	0.8000 mm
terminal coating	MATTE Tin	MATTE Tin	MATTE Tin	MATTE Tin	MATTE Tin
Terminal location	pair	pair	pair	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
Temperature level	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE
memory width	16	16	16	16	16
organize	256K × 16	256K × 16	256K × 16	256K × 16	256K × 16
storage density	4.19E6 deg	4.19E6 deg	4.19E6 deg	4.19E6 deg	4.19E6 deg
operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Memory IC type	Standard memory	Standard memory	Standard memory	Standard memory	Standard memory
serial parallel	parallel	parallel	parallel	parallel	parallel
Number of digits	256K	256K	256K	256K	256K

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