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CSC1507O

Description
NPN EPITAXIAL SILICON POWER TRANSISTOR
File Size77KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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CSC1507O Overview

NPN EPITAXIAL SILICON POWER TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTOR
CSC1507
TO126
Plastic Package
EC
B
Color TV Chroma Output
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector DIssipation @ Tc=25ºC
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
VALUE
300
300
7
200
10
150
-55 to +150
UNIT
V
V
V
mA
W
ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output Capacitance
SYMBOL TEST CONDITION
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
V
CE(Sat)
f
T
Cob
I
C
=100µΑ, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=200V, I
E
=0
I
C
=10mA, V
CE
=10V
I
C
=50mA, I
B
=5mA
I
C
=10mA, V
CE
=30V
V
CB
=50V, IE=0
f=1MHz
MIN
300
300
7
-
40
-
40
-
TYP
-
-
-
-
-
-
-
4
MAX
-
-
-
100
240
2.0
-
-
UNIT
V
V
V
µA
V
MHz
pF
Classification
h
FE
R
40 - 80
O
70 - 140
Y
120 - 240
G
200 - 400
Continental Device India Limited
Data Sheet
Page 1 of 3

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