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1N5820/4G

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size344KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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1N5820/4G Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

1N5820/4G Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeDO-201AD
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage20 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1N5820 thru 1N5822
Vishay General Semiconductor
Schottky Barrier Rectifier
FEATURES
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
DO-201AD
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
3.0 A
20 V, 30 V, 40 V
80 A
0.475 V, 0.500 V, 0.525 V
125 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
MECHANICAL DATA
Case:
DO-201AD
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Non-repetitive peak reverse voltage
Maximum average forward rectified current 0.375" (9.5 mm) lead
length at T
L
= 95 °C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
V
RSM
I
F(AV)
I
FSM
T
J
, T
STG
1N5820
20
14
20
24
1N5821
30
21
30
36
3.0
80
- 65 to + 125
1N5822
40
28
40
48
UNIT
V
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
(1)
Maximum instantaneous forward voltage
(1)
Maximum average reverse current at rated
DC blocking voltage
(1)
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Document Number: 88526
Revision: 20-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
155
TEST CONDITIONS
3.0
9.4
T
A
= 25 °C
T
A
= 100 °C
SYMBOL
V
F
V
F
I
R
1N5820
0.475
0.850
1N5821
0.500
0.900
2.0
20
1N5822
0.525
0.950
UNIT
V
V
mA

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