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IRFS3306PBF

Description
160 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size433KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRFS3306PBF Overview

160 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

IRFS3306PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)184 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)160 A
Maximum drain current (ID)120 A
Maximum drain-source on-resistance0.0042 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)230 W
Maximum pulsed drain current (IDM)620 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON

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IRFS3306PBF IRFSL3306PBF IRFB3306PBF
Description 160 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 160 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA 160 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code D2PAK TO-262AA TO-220AB
package instruction SMALL OUTLINE, R-PSSO-G2 LEAD FREE, TO-262, 3 PIN LEAD FREE PACKAGE-3
Contacts 3 3 3
Reach Compliance Code _compli not_compliant unknown
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 184 mJ 184 mJ 184 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V
Maximum drain current (Abs) (ID) 160 A 160 A 160 A
Maximum drain current (ID) 120 A 160 A 160 A
Maximum drain-source on-resistance 0.0042 Ω 0.0042 Ω 0.0042 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-262AA TO-220AB
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSFM-T3
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 2 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260 250
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 230 W 230 W 230 W
Maximum pulsed drain current (IDM) 620 A 620 A 620 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES NO NO
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrie Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 40 30
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Humidity sensitivity level 1 1 -
Base Number Matches - 1 1

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