|
IRFS3306PBF |
IRFSL3306PBF |
IRFB3306PBF |
Description |
160 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
160 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
160 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
Is it lead-free? |
Lead free |
Lead free |
Lead free |
Is it Rohs certified? |
conform to |
conform to |
conform to |
Maker |
International Rectifier ( Infineon ) |
International Rectifier ( Infineon ) |
International Rectifier ( Infineon ) |
Parts packaging code |
D2PAK |
TO-262AA |
TO-220AB |
package instruction |
SMALL OUTLINE, R-PSSO-G2 |
LEAD FREE, TO-262, 3 PIN |
LEAD FREE PACKAGE-3 |
Contacts |
3 |
3 |
3 |
Reach Compliance Code |
_compli |
not_compliant |
unknown |
ECCN code |
EAR99 |
EAR99 |
EAR99 |
Avalanche Energy Efficiency Rating (Eas) |
184 mJ |
184 mJ |
184 mJ |
Shell connection |
DRAIN |
DRAIN |
DRAIN |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
60 V |
60 V |
60 V |
Maximum drain current (Abs) (ID) |
160 A |
160 A |
160 A |
Maximum drain current (ID) |
120 A |
160 A |
160 A |
Maximum drain-source on-resistance |
0.0042 Ω |
0.0042 Ω |
0.0042 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code |
TO-263AB |
TO-262AA |
TO-220AB |
JESD-30 code |
R-PSSO-G2 |
R-PSIP-T3 |
R-PSFM-T3 |
JESD-609 code |
e3 |
e3 |
e3 |
Number of components |
1 |
1 |
1 |
Number of terminals |
2 |
3 |
3 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Maximum operating temperature |
175 °C |
175 °C |
175 °C |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
Package form |
SMALL OUTLINE |
IN-LINE |
FLANGE MOUNT |
Peak Reflow Temperature (Celsius) |
260 |
260 |
250 |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
N-CHANNEL |
Maximum power dissipation(Abs) |
230 W |
230 W |
230 W |
Maximum pulsed drain current (IDM) |
620 A |
620 A |
620 A |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
surface mount |
YES |
NO |
NO |
Terminal surface |
Matte Tin (Sn) - with Nickel (Ni) barrie |
Matte Tin (Sn) - with Nickel (Ni) barrier |
Matte Tin (Sn) - with Nickel (Ni) barrier |
Terminal form |
GULL WING |
THROUGH-HOLE |
THROUGH-HOLE |
Terminal location |
SINGLE |
SINGLE |
SINGLE |
Maximum time at peak reflow temperature |
30 |
40 |
30 |
transistor applications |
SWITCHING |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |
SILICON |
Humidity sensitivity level |
1 |
1 |
- |
Base Number Matches |
- |
1 |
1 |