SMAJ530, SMAJ550
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional polarity only
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
DO-214AC (SMA)
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
V
BR
(uni-directional)
V
WM
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
530 V to 550 V
477 V, 495 V
300 W
2.5 W
40 A
150 °C
Uni-directional
DO-214AC (SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
APPLICATION NOTES
• Respect thermal resistance (PCB Layout) - as the
temperature coefficient also contributes to the clamping
voltage
• Select minimum breakdown voltage, so you get
acceptable power dissipation and PCB tie point
temperature
• Devices with higher breakdown voltage will have a shorter
conduction time and will dissipate less power
• Clamping voltage is influenced by internal resistance -
design approximation is 7 V per 100 mA slope
• Keep temperature of TVS lower than TOPSwitch
®
as a
recommendation
• Maximum current is determined by the maximum T
J
and
can be higher than 300 mA
• Contact supplier for
current arrangements
different
clamping
voltage/
• Minimum breakdown voltage can be customized for other
applications. Contact supplier
• TOPSwitch is a
Integrations, Inc.
registered
trademark
of
Power
Revision: 10-Dec-13
Document Number: 88391
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMAJ530, SMAJ550
www.vishay.com
Vishay General Semiconductor
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Peak pulse power dissipation
(1)(2)(4)
(fig. 1)
Power dissipation on infinite heatsink
(3)
SYMBOL
P
PPM
P
D
T
J
, T
STG
SMAJ530
HD
300
2.5
SMAJ550
SB
UNIT
W
W
°C
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above 25 °C per fig. 2.
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(3)
Lead temperature at T = 75 °C
L
(4)
Peak pulse power waveform is 10/1000 μs
- 55 to 150
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
BREAKDOWN VOLTAGE
V
BR
AT I
T
(V)
MIN.
SMAJ530
SMAJ550
530
550
TEST CURRENT
I
T
(μA)
100
100
STAND-OFF VOLTAGE
V
WM
(V)
477
495
ADDITIONAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Max. clamping voltage
Maximum DC reverse leakage current
Typical temperature coefficient
Typical capacitance
(1)
Note
Measured at 1 MHz
TEST CONDITIONS
400 mA, 10/1000 μs waveform
V
WM
of V
BR
0V
200 V
C
J
SYMBOL
V
C
I
D
SMAJ530
760
1.0
650
90
7.5
SMAJ550
UNIT
V
μA
mV/°C
pF
(1)
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to lead
Typical thermal resistance, junction to ambient
(1)
Note
(1)
Mounted on minimum recommended pad layout
SYMBOL
R
JL
R
JA
SMAJ530
30
120
SMAJ550
UNIT
°C/ W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMAJ530-E3/61
SMAJ530-E3/5A
SMAJ530HE3/61
(1)
SMAJ530HE3/5A
(1)
SMAJ530HE3_A/H
(1)
SMAJ530HE3_A/I
(1)
(1)
UNIT WEIGHT (g)
0.064
0.064
0.064
0.064
0.064
0.064
PREFERRED PACKAGE CODE
61
5A
61
5A
H
I
BASE QUANTITY
1800
7500
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
Revision: 10-Dec-13
Document Number: 88391
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMAJ530, SMAJ550
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
150
Non-Repetitive Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50 % of I
PPM
I
PPM
- Peak Pulse Current, % I
RSM
P
PPM
- Peak Pulse Power (kW)
t
r
= 10 µs
Peak Value
I
PPM
100
Half Value - I
PP
I
PPM
2
50
10/1000 µs
Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
1
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
t
d
- Pulse
Width
(s)
t - Time (ms)
Fig. 1 - Peak Pulse Power Rating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
Fig. 3 -
Pulse Waveform
75
50
25
0
0
25
50
75
100
125
150
175
200
T
J
- Initial Temperature (°C)
Fig. 2 -
Pulse Power or Current vs. Initial Junction Temperature
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 10-Dec-13
Document Number: 88391
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
Test/Measurement
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