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BUV47-S

Description
Bipolar Transistors - BJT 850V 9A NPN
Categorysemiconductor    Discrete semiconductor   
File Size123KB,6 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
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BUV47-S Overview

Bipolar Transistors - BJT 850V 9A NPN

BUV47-S Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerBourns
Product CategoryBipolar Transistors - BJT
Transistor PolarityNPN
Factory Pack Quantity8000
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
Rugged Triple-Diffused Planar Construction
9 A Continuous Collector Current
1000 Volt Blocking Capability
B
SOT-93 PACKAGE
(TOP VIEW)
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (V
BE
= -2.5 V)
Collector-emitter voltage (R
BE
= 10
Ω)
Collector-emitter voltage (I
B
= 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for t
p
5 ms, duty cycle
2%.
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
SYMBOL
V
CEX
V
CER
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
VALUE
850
1000
850
1000
400
450
9
15
3
6
120
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
A
A
W
°C
°C
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1

BUV47-S Related Products

BUV47-S BUV47A-S
Description Bipolar Transistors - BJT 850V 9A NPN Bipolar Transistors - BJT 1000V 9A NPN
Product Attribute Attribute Value Attribute Value
Manufacturer Bourns Bourns
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Transistor Polarity NPN NPN
Factory Pack Quantity 8000 7980
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