BDX33B datasheet, PDF - EEWORLD Datasheet

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BDX33B: DescriptionDarlington Transistors 10A 80V Bipolar; CategoryDiscrete semiconductor The transistor; File Size131KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BDX33B Overview

Darlington Transistors 10A 80V Bipolar

BDX33B Parametric

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Contains lead
Maker	ON Semiconductor
Parts packaging code	TO-220AB
package instruction	CASE 221A-09, 3 PIN
Contacts	3
Manufacturer packaging code	221A-09
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	1 week
Is Samacsys	N
Other features	LEADFORM OPTIONS ARE AVAILABLE
Shell connection	COLLECTOR
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	80 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	750
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	NPN
Maximum power dissipation(Abs)	70 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	3 MHz
Base Number Matches	1

BDX33B Related Products

	BDX33B	BDX34B
Description	Darlington Transistors 10A 80V Bipolar	Darlington Transistors 10A 80V Bipolar
Brand Name	ON Semiconductor	ON Semiconductor
Is it lead-free?	Contains lead	Contains lead
Maker	ON Semiconductor	ON Semiconductor
Parts packaging code	TO-220AB	TO-220AB
package instruction	CASE 221A-09, 3 PIN	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Manufacturer packaging code	221A-09	221A-09
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Factory Lead Time	1 week	1 week
Other features	LEADFORM OPTIONS ARE AVAILABLE	LEADFORM OPTIONS ARE AVAILABLE
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	10 A	10 A
Collector-emitter maximum voltage	80 V	80 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	750	750
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	240	240
Polarity/channel type	NPN	PNP
Maximum power dissipation(Abs)	70 W	70 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	3 MHz	3 MHz

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