KSD401
KSD401
TV Vertical Deflection Output
•
•
•
•
Collector-Base Voltage : V
CBO
=200V
Collector Current : I
C
=2A
Collector Dissipation : P
C
=25W(T
C
=25°C)
Complement to KSB546
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
200
150
5
2
25
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
f
T
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Test Condition
I
C
= 500uA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= -500uA, I
C
= 0
V
CB
= 150V, I
E
= 0
V
CE
= 10V, I
C
= 0.4A
I
C
= 500mA, I
B
= 50mA
V
CE
= 10V, I
C
= 0.4A
5
120
Min.
200
150
5
50
400
1
V
MHz
Typ.
Max.
Units
V
V
V
µA
h
FE
Classification
Classification
h
FE
Y
120 ~ 240
G
200 ~ 400
©2004 Fairchild Semiconductor Corporation
Rev. B, February 2004
KSD401
Typical Characteristics
1.0
0.9
1000
V
CE
= 10V
I
B
= 8mA
I
C
[A], COLLECTOR CURRENT
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
5
10
15
20
I
B
= 6mA
I
B
= 5mA
I
B
= 4mA
I
B
= 3mA
I
B
= 2mA
I
B
= 1mA
25
30
35
40
45
50
h
FE
, DC CURRENT GAIN
I
B
= 7mA
100
10
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
1000
I
C
= 10 I
B
1
V
BE
(sat)
C
ob
[pF], CAPACITANCE
1
10
100
0.1
V
CE
(sat)
0.01
0.01
0.1
10
1
10
100
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
10
40
I
C
[A], COLLECTOR CURRENT
*1ms
P
C
[W], POWER DISSIPATION
1. Tc=25℃
2. *single pulse
35
30
25
Thermal limitation
1
S/B limitation
20
15
10
S/B limitation
5
0.1
10
100
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2004 Fairchild Semiconductor Corporation
Rev. B, February 2004
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As used herein:
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device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2004 Fairchild Semiconductor Corporation
Rev. I7
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