JAN1N5802US datasheet, PDF - EEWORLD Datasheet

JAN1N5802US: Description2.5 A, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size621KB，5 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2.5 A, SILICON, RECTIFIER DIODE

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Microsemi
Reach Compliance Code	unknown
Samacsys Description	Diode Switching 50V 2.5A 2-Pin A-MELF Bag Voidless Hermetically Sealed Ultrafast Recovery Glass Rectifiers
application	ULTRA FAST RECOVERY POWER
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-LELF-R2
Maximum non-repetitive peak forward current	35 A
Number of components	1
Phase	1
Number of terminals	2
Maximum output current	2.5 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Qualified
Guideline	MIL-19500/477F
Maximum reverse recovery time	0.025 µs
surface mount	YES
Terminal form	WRAP AROUND
Terminal location	END
Base Number Matches	1

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